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NTLUD3191PZTBG

Onsemi

NTLUD3191PZTBG by Onsemi

NTLUD3191PZTBG by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 1.1A, and Drain-Source On Resistance of 0.25 ohm. This small outline transistor in PLASTIC/EPOXY package is designed for surface mount with DUAL terminals.

Median Price

$0.203

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

21,000

-

$0.211

$0.175

$0.156

Verical

USA . 21,000 parts In-Stock

1+ parts

-

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$0.195

21,000

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-

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$0.195

Distributors (In-Stock)

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Digiode

USA . 1,446 parts In-Stock

1+ parts

$0.164

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1,446

$0.164

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Vyrian

USA . 3,359 parts In-Stock

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3,359

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Distributors (Availability)

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Corphita

USA . 2,327 parts In-Stock

1+ parts

$0.156

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-

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2,327

$0.156

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Corohmni

South Africa . 278 parts In-Stock

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$0.173

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278

$0.173

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.385

100+ parts

$0.350

1k+ parts

$0.316

10k+ parts

-

350

$0.385

$0.350

$0.316

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AZTECH Wire

Italy . 962 parts In-Stock

1+ parts

$10.700

100+ parts

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962

$10.700

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Continental Prestige Electronics

USA . 21,000 parts In-Stock

1+ parts

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100+ parts

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$0.159

10k+ parts

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21,000

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$0.159

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,153 parts In-Stock

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Problanco Electronics

Mexico . 4,832 parts In-Stock

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Kulean Microsystems

USA . 4,034 parts In-Stock

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4,034

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TANS Electronics

Latvia . 1,483 parts In-Stock

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1,483

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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167

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Overview

Upgrade your electronic devices with the NTLUD3191PZTBG by Onsemi, a high-quality P-Channel Small Signal Field Effect Transistor. With a compact square package and built-in diode, this transistor is perfect for switching applications. Experience enhanced performance and reliability with a maximum drain current of 1.1A and low on resistance of 0.25 ohm. Trust in Onsemi's expertise in semiconductor technology to bring you top-of-the-line solutions. Elevate your projects with the NTLUD3191PZTBG and unlock endless possibilities in electronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Offers high input impedance and low output impedance, making it suitable for switching applications.

Transistor Application: SWITCHING

Designed for efficient switching operations in electronic circuits.

Minimum DS Breakdown Voltage: 20 V

Can withstand voltages up to 20V, making it suitable for a variety of low-power applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Drain Current (ID): 1.1 A

Capable of carrying high currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.25 ohm

Low on-resistance ensures efficient power handling and minimal power loss.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUD3191PZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUD3191PZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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