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NTLUS3A18PZTAG

Onsemi

NTLUS3A18PZTAG by Onsemi

NTLUS3A18PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a SQUARE package suitable for SURFACE MOUNT technology.

Median Price

$1.465

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$2.300

100+ parts

$2.277

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-

10k+ parts

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100

$2.300

$2.277

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Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

-

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6,000

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DigiKey

USA . 5,038 parts In-Stock

1+ parts

-

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$0.630

5,038

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-

$0.630

Distributors (In-Stock)

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Digiode

USA . 360 parts In-Stock

1+ parts

$0.998

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-

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360

$0.998

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Chip Stock

USA . 66,000 parts In-Stock

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66,000

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Flip Electronics

USA . 5,038 parts In-Stock

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5,038

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Vyrian

USA . 4,446 parts In-Stock

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4,446

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Distributors (Availability)

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Corphita

USA . 341 parts In-Stock

1+ parts

$0.945

100+ parts

-

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341

$0.945

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Corohmni

South Africa . 440 parts In-Stock

1+ parts

$1.050

100+ parts

-

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440

$1.050

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Microchip USA

USA . 299 parts In-Stock

1+ parts

$1.610

100+ parts

$1.600

1k+ parts

$1.600

10k+ parts

$1.590

299

$1.610

$1.600

$1.600

$1.590

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.300

100+ parts

$2.277

1k+ parts

$2.185

10k+ parts

-

100

$2.300

$2.277

$2.185

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RC Electronics

USA . 82,207 parts In-Stock

1+ parts

-

100+ parts

$0.310

1k+ parts

$0.280

10k+ parts

$0.270

82,207

-

$0.310

$0.280

$0.270

Kepictronics

USA . 35,894 parts In-Stock

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35,894

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Perfect Parts

USA . 30,141 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,725 parts In-Stock

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24,725

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ChipstoGo Electronic ltd

UK . 15,538 parts In-Stock

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15,538

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Lixinc

USA . 9,562 parts In-Stock

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9,562

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TANS Electronics

Latvia . 7,590 parts In-Stock

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7,590

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Problanco Electronics

Mexico . 6,216 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 4,676 parts In-Stock

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4,676

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Kulean Microsystems

USA . 3,818 parts In-Stock

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3,818

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 2,475 parts In-Stock

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2,475

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 692 parts In-Stock

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692

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Overview

Discover the power of innovation with the NTLUS3A18PZTAG by Onsemi. Crafted with precision and quality, this small signal field effect transistor offers exceptional performance in switching applications. With a maximum drain current of 8.2 A and a minimum DS breakdown voltage of 20 V, this P-channel transistor is designed to exceed expectations. Whether you're looking for reliability, efficiency, or versatility, the NTLUS3A18PZTAG delivers it all. Trust Onsemi's expertise and experience to bring you cutting-edge technology that meets your needs seamlessly. Elevate your projects with this high-performing transistor and experience the difference it can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode provides protection against reverse polarity and prevents damage to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing costs.

Maximum Drain Current (Abs) (ID): 8.2 A

High maximum drain current rating allows for handling of higher current loads without overheating.

Maximum Power Dissipation (Abs): 3.8 W

With a high power dissipation rating, this transistor can handle higher power levels without damage.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, fast switching speeds, and low power consumption.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding thermal conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time prevents overheating during soldering process, ensuring reliability and quality.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS3A18PZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

8.2 A

Maximum Drain Current (ID):

5.1 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS3A18PZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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