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NTLUS3A18PZCTCG

Onsemi

NTLUS3A18PZCTCG by Onsemi

NTLUS3A18PZCTCG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics or industrial control systems.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,000 parts In-Stock

1+ parts

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$0.080

9,000

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$0.080

Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

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9,000

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Rochester

USA . 1,320 parts In-Stock

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-

100+ parts

$0.319

1k+ parts

$0.265

10k+ parts

$0.236

1,320

-

$0.319

$0.265

$0.236

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,026 parts In-Stock

1+ parts

$0.080

100+ parts

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1,026

$0.080

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Digiode

USA . 127 parts In-Stock

1+ parts

$0.249

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127

$0.249

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Flip Electronics

USA . 9,000 parts In-Stock

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9,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 169 parts In-Stock

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$0.080

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169

$0.080

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Corphita

USA . 2,424 parts In-Stock

1+ parts

$0.236

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2,424

$0.236

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Component Stockers USA

USA . 219 parts In-Stock

1+ parts

$99.990

100+ parts

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219

$99.990

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TANS Electronics

Latvia . 8,229 parts In-Stock

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8,229

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Problanco Electronics

Mexico . 6,729 parts In-Stock

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6,729

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Kulean Microsystems

USA . 2,526 parts In-Stock

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2,526

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SupplyDigital Components

Austria . 1,387 parts In-Stock

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UHIMA Technologies

Türkiye . 24 parts In-Stock

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24

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Overview

Discover the power of reliable performance with the NTLUS3A18PZCTCG by Onsemi. Crafted with precision in mind, this P-CHANNEL small signal FET offers unparalleled quality and durability. Ideal for a variety of applications, from automotive to industrial, this single configuration transistor delivers maximum drain current of 8.2 A and a robust power dissipation of 3.8 W. Trust in Onsemi's expertise and elevate your projects with the NTLUS3A18PZCTCG - where value meets innovation.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower on-resistance and higher current carrying capability compared to N-channel transistors, making them suitable for high-power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making the product suitable for compact designs.

Surface Mount: YES

Surface mount technology allows for easy mounting on PCBs, enabling automated assembly and miniaturization of devices.

Maximum Drain Current (Abs) (ID): 8.2 A

High maximum drain current rating enables the transistor to handle large current loads without overheating, making it suitable for power applications.

Maximum Power Dissipation (Abs): 3.8 W

Low power dissipation ensures efficient operation and helps in reducing heat generation, improving overall reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good stability and high performance, making the transistor suitable for demanding applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, ensuring reliable operation in harsh environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and electrical conductivity, facilitating easy assembly and ensuring reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures that the transistor can withstand soldering processes without damage, improving manufacturing efficiency.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering of the transistor, ensuring durable connections during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS3A18PZCTCG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8.2 A

Maximum Drain Current (ID):

8.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUS3A18PZCTCG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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