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NTLUS3A18PZTBG

Onsemi

NTLUS3A18PZTBG by Onsemi

NTLUS3A18PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C temperature.

Median Price

$0.284

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 66,993 parts In-Stock

1+ parts

-

100+ parts

$0.293

1k+ parts

$0.243

10k+ parts

$0.217

66,993

-

$0.293

$0.243

$0.217

Verical

USA . 45,241 parts In-Stock

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$0.284

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$0.284

DigiKey

USA . 45,000 parts In-Stock

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$0.160

45,000

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$0.160

Flip Electronics (Authorized)

USA . 45,000 parts In-Stock

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45,000

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Digiode

USA . 2,003 parts In-Stock

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$0.239

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$0.239

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Chip Stock

USA . 74,000 parts In-Stock

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Flip Electronics

USA . 45,000 parts In-Stock

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Vyrian

USA . 12,999 parts In-Stock

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12,999

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ComSIT Distribution GmbH

Germany . 3,497 parts In-Stock

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Cyclops Electronics Ltd

UK . 200 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 254 parts In-Stock

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$0.199

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$0.199

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Corphita

USA . 575 parts In-Stock

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$0.227

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575

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AZTECH Wire

Italy . 1,142 parts In-Stock

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$15.560

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$15.560

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Continental Prestige Electronics

USA . 78,000 parts In-Stock

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$0.300

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Problanco Electronics

Mexico . 7,336 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,360 parts In-Stock

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SupplyDigital Components

Austria . 6,325 parts In-Stock

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Kulean Microsystems

USA . 3,511 parts In-Stock

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TANS Electronics

Latvia . 2,314 parts In-Stock

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ChipstoGo Electronic ltd

UK . 1,766 parts In-Stock

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UHIMA Technologies

Türkiye . 932 parts In-Stock

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932

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Microchip USA

USA . 426 parts In-Stock

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Overview

Elevate your electronic projects with the NTLUS3A18PZTBG by Onsemi, a top-quality P-CHANNEL field effect transistor that offers unparalleled performance and reliability. This small signal FET is perfect for switching applications, featuring a single configuration with a built-in diode for added convenience. With a maximum drain current of 5.1A and a low on-resistance of 0.018 ohm, this transistor ensures efficient power management. Upgrade your designs with Onsemi's cutting-edge technology and experience the benefits of enhanced functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to environmental factors, ensuring long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-channel type allows for efficient control of current flow in the transistor, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and provides added functionality for the transistor's application.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, the transistor can handle higher voltages without damage, increasing its versatility.

Maximum Drain Current (Abs) (ID): 8.2 A

High maximum drain current rating of 8.2A allows for handling of larger loads, suitable for high-power applications.

Maximum Power Dissipation (Abs): 3.8 W

With a maximum power dissipation of 3.8W, the transistor can handle higher power levels without overheating, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures stable performance even in harsh environmental conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast response times, ideal for switching applications.

Maximum Drain-Source On Resistance: 0.018 ohm

Low drain-source on resistance of 0.018 ohms minimizes power losses and improves efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS3A18PZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

8.2 A

Maximum Drain Current (ID):

5.1 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS3A18PZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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