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NTTD4401FR2

Onsemi

NTTD4401FR2 by Onsemi

NTTD4401FR2 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 2.4A drain current, and 0.09 ohm on-resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode up to 150 °C.

Median Price

$0.178

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,006 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

4,006

-

$0.185

$0.153

$0.137

Verical

USA . 4,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.171

4,006

-

-

-

$0.171

Distributors (In-Stock)

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Digiode

USA . 1,622 parts In-Stock

1+ parts

$0.144

100+ parts

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1,622

$0.144

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Vyrian

USA . 5,612 parts In-Stock

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5,612

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Distributors (Availability)

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Corphita

USA . 987 parts In-Stock

1+ parts

$0.137

100+ parts

-

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987

$0.137

-

-

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$0.152

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-

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257

$0.152

-

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Component Stockers USA

USA . 3,956 parts In-Stock

1+ parts

$0.160

100+ parts

$0.150

1k+ parts

$0.130

10k+ parts

-

3,956

$0.160

$0.150

$0.130

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AZTECH Wire

Italy . 319 parts In-Stock

1+ parts

$10.960

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319

$10.960

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Perfect Parts

USA . 40,191 parts In-Stock

1+ parts

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40,191

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RC Electronics

USA . 32,400 parts In-Stock

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32,400

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Problanco Electronics

Mexico . 8,268 parts In-Stock

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8,268

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A-Z Elektronik GmbH

Germany . 6,921 parts In-Stock

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6,921

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Continental Prestige Electronics

USA . 5,853 parts In-Stock

1+ parts

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100+ parts

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$0.139

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5,853

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$0.139

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Kulean Microsystems

USA . 4,998 parts In-Stock

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SupplyDigital Components

Austria . 4,370 parts In-Stock

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4,370

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TANS Electronics

Latvia . 3,182 parts In-Stock

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Kepictronics

USA . 508 parts In-Stock

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508

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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281

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Overview

Discover the next level of performance with the NTTD4401FR2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Small Signal Field Effect Transistors. This P-CHANNEL transistor offers enhanced switching capabilities, making it ideal for a variety of applications. With a built-in diode and a maximum power dissipation of 1.42 W, this transistor provides exceptional value and benefits to customers looking for high-performance components. Upgrade your electronic designs today with the NTTD4401FR2 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching operations and enhances performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: SWITCHING

Optimized for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation on PCBs, saving time during assembly.

Minimum DS Breakdown Voltage: 20 V

Suitable for applications requiring a minimum breakdown voltage of 20 V, ensuring reliable operation.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting within electronic circuits.

Terminal Form: GULL WING

Enables reliable solder connections, contributing to the overall durability of the product.

Operating Mode: ENHANCEMENT MODE

Enhances the efficiency and performance of the transistor in various operating conditions.

Maximum Drain Current (Abs): 2.4 A

Capable of handling high drain currents, making it suitable for power applications.

No. of Terminals: 8

Provides multiple connection points for versatile integration into electronic circuits.

Maximum Power Dissipation (Abs): 1.42 W

Efficiently dissipates heat and ensures stable operation under maximum power conditions.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for dense circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced MOSFET technology for improved performance and efficiency.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance.

Transistor Element Material: SILICON

Uses silicon material for the transistor element, providing good performance characteristics.

Terminal Finish: TIN LEAD

Ensures reliable electrical connections and prevents oxidation for long-term use.

Maximum Drain-Source On Resistance: 0.09 ohm

Low on-resistance minimizes power losses and improves efficiency.

Terminal Position: DUAL

Provides flexibility in connection options, enabling versatile circuit designs.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during assembly processes, ensuring proper soldering.

Maximum Feedback Capacitance (Crss): 175 pF

Low feedback capacitance helps reduce signal distortion and enhance signal integrity.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTD4401FR2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.4 A

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

175 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTD4401FR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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