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NTTD1P02R2

Onsemi

NTTD1P02R2 by Onsemi

NTTD1P02R2 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1.45A max drain current, and 0.16 ohm max on resistance. Ideal for switching applications, it features a small outline package with GULL WING terminals and operates in enhancement mode up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,670 parts In-Stock

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Digiode

USA . 212 parts In-Stock

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AZTECH Wire

Italy . 721 parts In-Stock

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$19.190

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QUARKTWIN TECHNOLOGY LTD

USA . 22,472 parts In-Stock

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TANS Electronics

Latvia . 6,056 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,972 parts In-Stock

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Problanco Electronics

Mexico . 4,098 parts In-Stock

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Kulean Microsystems

USA . 3,457 parts In-Stock

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SupplyDigital Components

Austria . 2,857 parts In-Stock

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Corphita

USA . 1,724 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Overview

Increase the efficiency and performance of your electronic devices with the NTTD1P02R2 by Onsemi. Crafted with precision and quality in mind, this P-CHANNEL Small Signal Field Effect Transistor boasts a separate configuration with 2 elements and a built-in diode, making it ideal for switching applications. With a maximum drain current of 1.45 A and a low on-resistance of 0.16 ohm, this transistor offers exceptional value and reliability. Trust Onsemi's expertise in semiconductor technology to deliver cutting-edge solutions for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower on-resistance and higher transconductance, making them efficient for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile circuit design options and includes a built-in diode for protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in this use case.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

Can handle voltage up to 20V, suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 1.45 A

Capable of handling high current loads, making it suitable for various electronic devices.

Maximum Power Dissipation (Abs): 0.5 W

Efficient power dissipation ensures the transistor operates within safe temperature limits.

Maximum Drain-Source On Resistance: 0.16 ohm

Low on-resistance reduces power loss and improves efficiency in switching applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without degradation, suitable for industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTD1P02R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.45 A

Maximum Drain Current (ID):

1.45 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTD1P02R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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