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NTTD2P02R2

Onsemi

NTTD2P02R2 by Onsemi

NTTD2P02R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This RECTANGULAR package with GULL WING terminals has a max temp of 150 °C and is suitable for surface mount designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 932 parts In-Stock

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Vyrian

USA . 178 parts In-Stock

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Problanco Electronics

Mexico . 7,008 parts In-Stock

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SupplyDigital Components

Austria . 6,930 parts In-Stock

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Kulean Microsystems

USA . 3,312 parts In-Stock

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TANS Electronics

Latvia . 2,379 parts In-Stock

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Corphita

USA . 2,370 parts In-Stock

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2,370

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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Corohmni

South Africa . 481 parts In-Stock

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Overview

Unlocking a world of possibilities, the NTTD2P02R2 by Onsemi is a game-changer in the realm of Small Signal Field Effect Transistors. With its cutting-edge technology and superior quality, this P-CHANNEL transistor with a built-in diode is perfect for switching applications. Offering enhanced performance and reliability, this surface mount transistor boasts a minimum DS breakdown voltage of 20V and a maximum drain current of 2.4A. Trust Onsemi to deliver excellence in every aspect, providing you with the power and efficiency you need for your projects. Step into the future with the NTTD2P02R2 and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low resistance and high performance, making this transistor efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides additional functionality for the transistor, enhancing its utility.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in controlling current flow.

Surface Mount: YES

Being surface mountable makes the transistor easy to assemble and suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without risk of damage or malfunction.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards, optimizing space and enabling streamlined designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring reliable performance in various applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and voltage-controlled operation, making this transistor versatile and efficient.

Maximum Drain Current (Abs) (ID): 2.4 A

With a maximum drain current of 2.4A, this transistor can handle high current loads, making it suitable for power applications.

No. of Terminals: 8

Having 8 terminals allows for versatile connectivity options, enabling complex circuit designs and configurations.

Maximum Power Dissipation (Abs): 0.78 W

The maximum power dissipation of 0.78W indicates the transistor's ability to handle heat and operate efficiently under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for applications where size and weight are crucial factors.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a durable and efficient choice.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and is suitable for demanding environments.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability and performance, ensuring stable operation and longevity for the product.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides corrosion resistance and optimal conductivity for reliable connections in various environments.

Maximum Drain-Source On Resistance: 0.09 ohm

The low drain-source on resistance of 0.09 ohm results in minimal power loss and efficient operation, making this transistor energy-efficient.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and enables versatile usage in different applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTD2P02R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.4 A

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTD2P02R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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