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NTTD1P02R2G

Onsemi

NTTD1P02R2G by Onsemi

NTTD1P02R2G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 1.45A, and max power dissipation of 0.5W. This small outline transistor operates in enhancement mode with a max temp of 150 °C.

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Overview

Discover the NTTD1P02R2G by Onsemi, a high-quality P-channel small signal field effect transistor with built-in diode for efficient switching applications. With a maximum drain current of 1.45A and a low drain-source on resistance of 0.16 ohm, this transistor offers superior performance in a compact package. Manufactured by Onsemi, known for their reliability and innovation, the NTTD1P02R2G provides customers with value and benefits that exceed expectations. Whether you're designing electronics for automotive, industrial, or consumer applications, this transistor is the perfect choice for your next project. Unlock the potential of your designs with the NTTD1P02R2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications with low power consumption.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers additional functionality with built-in diode elements, increasing versatility.

Transistor Application: SWITCHING

Ideal for use in switching circuits where fast response times are required.

Surface Mount: YES

Easily mountable on PCBs, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

Provides reliable performance under typical operating conditions.

Maximum Drain Current (Abs) (ID): 1.45 A

Capable of handling high currents for various applications.

Maximum Power Dissipation (Abs): 0.5 W

Efficiently dissipates heat to prevent overheating during operation.

Maximum Drain-Source On Resistance: 0.16 ohm

Ensures low resistance for efficient power flow in the circuit.

Maximum Operating Temperature: 150 °C

Can operate reliably in a wide range of temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTD1P02R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.45 A

Maximum Drain Current (ID):

1.45 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTD1P02R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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