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NTTD4401FR2G

Onsemi

NTTD4401FR2G by Onsemi

NTTD4401FR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150 °C operating temperature.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,875 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

12,875

-

$0.277

$0.230

$0.205

Verical

USA . 5,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.257

5,765

-

-

-

$0.257

Distributors (In-Stock)

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Digiode

USA . 1,515 parts In-Stock

1+ parts

$0.217

100+ parts

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1,515

$0.217

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Vyrian

USA . 4,994 parts In-Stock

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4,994

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Distributors (Availability)

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Corphita

USA . 523 parts In-Stock

1+ parts

$0.205

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-

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523

$0.205

-

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Corohmni

South Africa . 304 parts In-Stock

1+ parts

$0.228

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-

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304

$0.228

-

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.359

100+ parts

$2.147

1k+ parts

$1.934

10k+ parts

-

1,000

$2.359

$2.147

$1.934

-

AZTECH Wire

Italy . 737 parts In-Stock

1+ parts

$18.070

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737

$18.070

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QUARKTWIN TECHNOLOGY LTD

USA . 14,475 parts In-Stock

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14,475

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Continental Prestige Electronics

USA . 12,875 parts In-Stock

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$0.209

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12,875

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$0.209

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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SupplyDigital Components

Austria . 6,848 parts In-Stock

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6,848

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TANS Electronics

Latvia . 6,804 parts In-Stock

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Kulean Microsystems

USA . 6,226 parts In-Stock

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Problanco Electronics

Mexico . 4,355 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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Metaverse IC Inc.

Canada . 1,100 parts In-Stock

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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721

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Overview

Discover the NTTD4401FR2G by Onsemi, a high-quality P-channel small signal field effect transistor perfect for switching applications. Manufactured by Onsemi, known for their reliable and innovative components, this FET offers customers unparalleled value with its built-in diode, enhancement mode operation, and low drain-source on resistance. Ideal for a variety of electronic projects, this surface mount transistor delivers superior performance and efficiency, making it a top choice for engineers and hobbyists alike. Explore the possibilities with the NTTD4401FR2G and experience the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for use in high-side switching applications, making this transistor versatile for various circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes, enhancing its reliability.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient power handling.

Surface Mount: YES

The surface-mount capability allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle a wide range of voltage levels, suitable for various circuit requirements.

Maximum Drain Current (Abs): 2.4 A

The high drain current capacity of 2.4A allows this transistor to handle moderate to high power loads reliably.

Maximum Power Dissipation (Abs): 1.42 W

With a maximum power dissipation of 1.42W, this transistor can efficiently handle power without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures stable performance even under high-temperature conditions.

Maximum Drain-Source On Resistance: 0.09 ohm

The low drain-source on resistance of 0.09 ohm minimizes power loss and enhances efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTD4401FR2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.4 A

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

175 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTD4401FR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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