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2N5460G

Onsemi

2N5460G by Onsemi

2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 3,002 parts In-Stock

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Digiode

USA . 2,268 parts In-Stock

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VNN

France . 1,800 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Aztec Data Supply Inc.

USA . 178 parts In-Stock

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$1.369

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AZTECH Wire

Italy . 816 parts In-Stock

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Semicontronic

India . 734 parts In-Stock

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$12.050

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$11.749

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$11.688

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734

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Ampacity Inc.

Singapore . 1,557 parts In-Stock

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$39.050

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TANS Electronics

Latvia . 5,188 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 3,950 parts In-Stock

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SupplyDigital Components

Austria . 3,699 parts In-Stock

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Kulean Microsystems

USA . 2,359 parts In-Stock

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Corphita

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 91 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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Overview

Looking to amplify your projects with precision and reliability? The 2N5460G by Onsemi is the answer. Manufactured by industry leader Onsemi, this P-CHANNEL Small Signal Field Effect Transistor (FET) offers superior performance in amplifier applications. With a maximum power dissipation of 0.35W and operating temperature of 135°C, this transistor guarantees quality and durability. Its junction field effect transistor technology ensures efficiency while its through-hole terminals make installation a breeze. Elevate your designs with the 2N5460G and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage during installation and operation.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance, making them suitable for use in amplifier circuits where signal amplification is required.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor provides low noise and high gain performance, making it ideal for use in audio amplifiers or other signal amplification circuits.

Operating Mode: DEPLETION MODE

Depletion mode transistors can conduct current when no voltage is applied to their gate terminal, allowing for easy control of the transistor's output signal.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35 W, this transistor can handle moderate power levels without risking damage, ensuring reliable operation in various circuit designs.

Maximum Operating Temperature: 135 °C

The high maximum operating temperature of 135°C allows this transistor to operate in demanding environments without risk of overheating, ensuring long-term stability and performance.

Maximum Feedback Capacitance (Crss): 2 pF

The low feedback capacitance of 2 pF minimizes the risk of parasitic oscillations in amplifier circuits, improving overall stability and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N5460G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5460G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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