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2N5460

Texas Instruments

2N5460 by Texas Instruments

2N5460 by Texas Instruments is a P-CHANNEL FET with 3 terminals. Operating in DEPLETION MODE, it has a max power dissipation of 0.31W and max temp of 150°C. Ideal for applications requiring low feedback capacitance, high drain-source resistance, and single-channel configuration.

Median Price

$1.884

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.884

100+ parts

$1.714

1k+ parts

$1.545

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1,000

$1.884

$1.714

$1.545

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Master Electronics

USA . 6 parts In-Stock

1+ parts

$3.113

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$0.900

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$0.710

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6

$3.113

$0.900

$0.710

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Verical

USA . 650 parts In-Stock

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$1.630

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650

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$1.630

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DF Sales Co.

USA . 555 parts In-Stock

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$0.927

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555

$0.927

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DF Sales Co.

USA . 555 parts In-Stock

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$0.927

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555

$0.927

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Nova Conductors

Japan . 50 parts In-Stock

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$0.960

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$0.960

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Component Electronics Inc.

Canada . 78 parts In-Stock

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$1.150

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$0.870

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$0.750

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DigiKey Marketplace

USA . 1,345 parts In-Stock

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$1.210

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Digiode

USA . 7,224 parts In-Stock

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$1.790

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American Microsemiconductor Inc.

USA . 9,184 parts In-Stock

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$2.770

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Chip Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Electronic Expediters

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Bristol Electronics

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Anansix

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MRC Electronics

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LIBRA Elektronik GmbH

Germany . 805 parts In-Stock

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Zilex Electronics Inc.

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Holdelec - ElecDif-Pro

France . 625 parts In-Stock

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625

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Technoshack Inc.

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450

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Jameco Electronics

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Prism Electronics

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Vyrian

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ACDS - Activité Composants Distribution Service

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Fibra_Brandt Electronic GMBH

Germany . 82 parts In-Stock

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Cogito LLC

Ukraine . 80 parts In-Stock

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Tech-Mark Corp

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Euro-Tech

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GES GmbH

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Huijzer Components

Netherlands . 67 parts In-Stock

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LittleDiode

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Mil-Aero Solutions, Inc.

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Resion

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ECAB

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Sunrise Surplus Inc.

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Lakeview Electronics

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A2Z Electronics, Inc.

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Sinequanon

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Electronics Depot

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Distributors (Availability)

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Parana Technologies

USA . 654 parts In-Stock

1+ parts

$0.753

100+ parts

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1k+ parts

$1.757

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654

$0.753

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$1.757

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DigiPath Technology Company

USA . 570 parts In-Stock

1+ parts

$0.829

100+ parts

$0.763

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570

$0.829

$0.763

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ChromeModa Solutions

Germany . 3,193 parts In-Stock

1+ parts

$0.846

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$0.694

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$0.846

$0.694

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IDEA Electronic Components Group

UK . 380 parts In-Stock

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$0.846

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$0.761

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380

$0.846

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$0.761

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Continental Prestige Electronics

USA . 3,882 parts In-Stock

1+ parts

$0.903

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$0.885

3,882

$0.903

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$0.885

Argo Parts USA

USA . 1,514 parts In-Stock

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$0.903

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1,514

$0.903

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Aztec Data Supply Inc.

USA . 1,221 parts In-Stock

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$0.952

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$0.952

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Corohmni

South Africa . 529 parts In-Stock

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$1.133

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529

$1.133

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Component Stockers USA

USA . 171 parts In-Stock

1+ parts

$1.160

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$0.770

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$1.160

$0.770

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Corphita

USA . 7,184 parts In-Stock

1+ parts

$1.696

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$1.696

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.884

100+ parts

$1.714

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$1.545

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1,000

$1.884

$1.714

$1.545

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Microchip USA

USA . 6,254 parts In-Stock

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$7.865

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6,254

$7.865

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QUARKTWIN TECHNOLOGY LTD

USA . 16,511 parts In-Stock

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UNI Independent Distributors

Spain . 7,700 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,502 parts In-Stock

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Problanco Electronics

Mexico . 6,706 parts In-Stock

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TANS Electronics

Latvia . 5,998 parts In-Stock

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XL Components Corporation

Australia . 5,902 parts In-Stock

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Kulean Microsystems

USA . 5,397 parts In-Stock

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SupplyDigital Components

Austria . 4,809 parts In-Stock

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Perfect Parts

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QualityLine Systems

Poland . 3,203 parts In-Stock

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Supply Digital

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Assy Fe

Spain . 971 parts In-Stock

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Marpe Global Electronics

Taiwan . 292 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 260 parts In-Stock

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Overview

Elevate your electronic projects with the 2N5460 by Texas Instruments, a high-quality Small Signal Field Effect Transistor. Manufactured by a trusted name in the industry, this P-CHANNEL FET offers reliable performance and versatility in a range of applications. With its efficient design and durable construction, the 2N5460 provides customers with exceptional value, optimal functionality, and seamless integration into their projects. Upgrade your circuits today with the Texas Instruments 2N5460 and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, making it a reliable choice for long-term use.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer low ON-resistance and high input impedance, making them suitable for low-power applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to implement in various electronic devices.

Package Shape: ROUND

The round shape allows for easy mounting and integration into different types of circuits.

Terminal Form: WIRE

The wire terminal form provides a secure connection and easy soldering for installation.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer a high input impedance and low switching losses, making them ideal for low-power applications.

No. of Terminals: 3

Having three terminals allows for precise control of the FET's operation in the circuit.

Maximum Power Dissipation (Abs): 0.31 W

With a high maximum power dissipation, this FET can handle higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact design for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance and low noise performance for better signal integrity.

Maximum Operating Temperature: 150 °C

This FET can operate at high temperatures without compromising performance, making it suitable for harsh environments.

Transistor Element Material: SILICON

Silicon transistors are reliable and widely used in the industry for their stability and performance.

Maximum Drain-Source On Resistance: 2000 ohm

With a low ON resistance, this FET can efficiently control the flow of current in the circuit.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and connection to other components.

Maximum Feedback Capacitance (Crss): 2 pF

The low feedback capacitance ensures minimal interference and stable operation in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N5460 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Maximum Drain-Source On Resistance:

2000 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Small Signal

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

2N5460 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-628-8737, 5961006288737, 5961-01-062-9825, 5961010629825

NIIN

006288737, 010629825

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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