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NTHS4501NT1

Onsemi

NTHS4501NT1 by Onsemi

NTHS4501NT1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.038 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features SINGLE configuration with built-in diode in a RECTANGULAR package suitable for surface mount assembly.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

3,000

-

$0.172

$0.143

$0.127

DigiKey

USA . 3,000 parts In-Stock

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$0.210

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$0.210

Verical

USA . 3,000 parts In-Stock

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$0.159

3,000

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$0.159

Distributors (In-Stock)

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Digiode

USA . 97 parts In-Stock

1+ parts

$0.134

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97

$0.134

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Chip Stock

USA . 28,000 parts In-Stock

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Vyrian

USA . 4,794 parts In-Stock

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4,794

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Distributors (Availability)

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Corphita

USA . 707 parts In-Stock

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$0.127

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707

$0.127

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Corohmni

South Africa . 185 parts In-Stock

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$0.141

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185

$0.141

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AZTECH Wire

Italy . 862 parts In-Stock

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$15.670

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862

$15.670

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Kulean Microsystems

USA . 5,400 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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$0.129

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$0.129

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SupplyDigital Components

Austria . 2,675 parts In-Stock

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TANS Electronics

Latvia . 2,502 parts In-Stock

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Problanco Electronics

Mexico . 878 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Overview

Experience the superior quality and performance of the NTHS4501NT1 by Onsemi, a top-tier manufacturer in the industry. This small signal field effect transistor (FET) offers unmatched reliability and efficiency for switching applications. With its N-channel configuration and built-in diode, this transistor provides seamless operation and enhanced functionality. Perfect for a wide range of electronic devices, the NTHS4501NT1 boasts a high maximum drain current of 4.9 A and minimal drain-source on resistance of 0.038 ohm, ensuring optimal performance. Trust Onsemi to deliver cutting-edge technology and innovation that exceeds expectations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for high efficiency and fast switching speeds, making this product suitable for applications requiring efficient power management.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse polarity protection and simplifies circuit design, making this product convenient and easy to use.

Transistor Application: SWITCHING

Designed for switching applications, this FET can handle rapid changes in voltage and current, making it ideal for applications such as power supplies and motor control.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without failing, providing reliability in demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards and efficient use of space, making this FET suitable for compact designs.

Terminal Form: C BEND

The C bend terminal form provides secure connectivity and ease of soldering, ensuring reliable performance in various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and low power consumption, making this FET energy-efficient and reliable.

Maximum Drain Current (ID): 4.9 A

With a maximum drain current of 4.9A, this FET can handle high power loads, making it suitable for applications that require high current levels.

Maximum Drain-Source On Resistance: 0.038 ohm

The low drain-source on resistance of 0.038 ohm minimizes power loss and heat dissipation, providing efficient operation and improved performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTHS4501NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.9 A

Maximum Drain-Source On Resistance:

.038 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

C BEND

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS4501NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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