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NTHS5443T1G

Onsemi

NTHS5443T1G by Onsemi

NTHS5443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.6A ID, and 0.065 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. With a RECTANGULAR package style and DUAL terminals, it's suitable for surface mount designs requiring high power dissipation of 1.3W.

Median Price

$0.141

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 143 parts In-Stock

1+ parts

$0.072

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143

$0.072

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Rochester

USA . 568,346 parts In-Stock

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-

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$0.228

1k+ parts

$0.189

10k+ parts

$0.168

568,346

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$0.228

$0.189

$0.168

Verical

USA . 315,000 parts In-Stock

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$0.210

315,000

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$0.210

DigiKey

USA . 9,000 parts In-Stock

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$0.070

9,000

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$0.070

Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 143 parts In-Stock

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Digiode

USA . 204 parts In-Stock

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$0.069

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204

$0.069

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Nova Conductors

Japan . 39 parts In-Stock

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$0.280

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39

$0.280

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.563

100+ parts

$0.208

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$0.146

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3,000

$0.563

$0.208

$0.146

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Vyrian

USA . 150,196 parts In-Stock

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Chip Stock

USA . 37,000 parts In-Stock

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Flip Electronics

USA . 9,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 2,500 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,468 parts In-Stock

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$0.066

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1,468

$0.066

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Corohmni

South Africa . 479 parts In-Stock

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$0.072

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479

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Ampacity Inc.

Singapore . 149,936 parts In-Stock

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$0.135

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$0.135

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Argo Parts USA

USA . 3,218 parts In-Stock

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$0.280

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$0.272

3,218

$0.280

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$0.272

Netroflash

USA . 2,000 parts In-Stock

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$0.280

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$0.280

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Continental Prestige Electronics

USA . 568,346 parts In-Stock

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$0.292

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Perfect Parts

USA . 19,837 parts In-Stock

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Kulean Microsystems

USA . 8,181 parts In-Stock

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Kepictronics

USA . 7,656 parts In-Stock

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Problanco Electronics

Mexico . 5,942 parts In-Stock

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Lixinc

USA . 3,644 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,327 parts In-Stock

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TANS Electronics

Latvia . 1,914 parts In-Stock

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SupplyDigital Components

Austria . 1,628 parts In-Stock

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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Overview

Experience the superior performance of the Onsemi NTHS5443T1G P-CHANNEL FET with built-in diode. Designed for switching applications, this small signal transistor offers reliable operation and high efficiency. With a maximum drain current of 3.6A and low on-resistance, this transistor provides exceptional value for your circuit design needs. Trust in the quality and innovation that Onsemi brings to the table, making your projects more efficient and dependable. Upgrade your electronics with the NTHS5443T1G and experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

This FET is designed for applications requiring P-channel polarity, making it suitable for specific circuit configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances overall efficiency, making this FET a convenient choice for various applications.

Transistor Application: SWITCHING

With a focus on switching applications, this FET offers fast response times and reliable performance in high-speed circuit operations.

Surface Mount: YES

Being surface mountable, this FET is easy to solder onto circuit boards and saves valuable space, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a breakdown voltage of 20 V, this FET can handle higher voltages, ensuring stable operation in demanding voltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape offers easy mounting and compatibility with standard PCB layouts, making integration into circuits hassle-free.

Terminal Form: C BEND

The C bend terminal form provides secure connections and reduces the risk of disconnection or signal loss, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the transistor's conductivity, enabling efficient signal amplification and switching.

Maximum Drain Current (Abs) (ID): 3.6 A

With a maximum drain current of 3.6 A, this FET can handle high current loads, making it suitable for power-hungry applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit connections and allows for complex circuit designs, making this FET versatile in various applications.

Maximum Power Dissipation (Abs): 1.3 W

With a maximum power dissipation of 1.3 W, this FET can handle moderate power loads without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and simplifies board layout, making this FET ideal for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOSFET technology provides high efficiency and low power consumption, making this FET suitable for energy-efficient applications.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150°C ensures reliability in high-temperature environments, making this FET suitable for industrial applications.

Transistor Element Material: SILICON

Made of silicon, this FET offers high performance, reliability, and compatibility with standard semiconductor processes, making it a popular choice in the industry.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures stable connections, prolonging the lifespan of the FET in various operating conditions.

Maximum Drain-Source On Resistance: 0.065 ohm

With a low on-resistance of 0.065 ohm, this FET minimizes power loss and heat generation, making it efficient for high-current applications.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and ease of installation, making this FET versatile and suitable for various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds at peak temperature, this FET ensures proper soldering and reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

Operating at a peak temperature of 260°C during reflow ensures proper solder joint formation and reliability in high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTHS5443T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS5443T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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