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NTHS5443T1

Onsemi

NTHS5443T1 by Onsemi

NTHS5443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.6A Drain Current, and 0.065 ohm On Resistance. Ideal for small outline packages with operating temperature up to 150 °C.

Median Price

$0.154

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,994 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

5,994

-

$0.159

$0.132

$0.117

DigiKey

USA . 5,994 parts In-Stock

1+ parts

-

100+ parts

-

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$0.200

5,994

-

-

-

$0.200

Farnell

UK . 5,994 parts In-Stock

1+ parts

-

100+ parts

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$0.150

5,994

-

-

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$0.150

Verical

USA . 5,994 parts In-Stock

1+ parts

-

100+ parts

-

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$0.147

5,994

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-

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$0.147

Distributors (In-Stock)

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Digiode

USA . 1,796 parts In-Stock

1+ parts

$0.124

100+ parts

-

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1,796

$0.124

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Bristol Electronics

USA . 2,825 parts In-Stock

1+ parts

$0.525

100+ parts

$0.263

1k+ parts

$0.105

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-

2,825

$0.525

$0.263

$0.105

-

Chip Stock

USA . 61,000 parts In-Stock

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61,000

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Vyrian

USA . 8,773 parts In-Stock

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8,773

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Microfarads

USA . 2,670 parts In-Stock

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2,670

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Prism Electronics

USA . 294 parts In-Stock

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294

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Distributors (Availability)

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Corphita

USA . 955 parts In-Stock

1+ parts

$0.117

100+ parts

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955

$0.117

-

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Corohmni

South Africa . 463 parts In-Stock

1+ parts

$0.130

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463

$0.130

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AZTECH Wire

Italy . 627 parts In-Stock

1+ parts

$17.750

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627

$17.750

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Kulean Microsystems

USA . 7,619 parts In-Stock

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7,619

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A-Z Elektronik GmbH

Germany . 6,195 parts In-Stock

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6,195

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TANS Electronics

Latvia . 6,028 parts In-Stock

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6,028

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Continental Prestige Electronics

USA . 5,994 parts In-Stock

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$0.119

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5,994

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$0.119

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SupplyDigital Components

Austria . 4,904 parts In-Stock

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4,904

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Problanco Electronics

Mexico . 4,004 parts In-Stock

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4,004

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Perfect Parts

USA . 1,864 parts In-Stock

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1,864

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UHIMA Technologies

Türkiye . 272 parts In-Stock

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Overview

Enhance your electronic devices with the NTHS5443T1 P-Channel Field Effect Transistor by Onsemi. Designed for switching applications, this small signal FET offers reliable performance and durability. With a built-in diode and a maximum drain current of 3.6A, this transistor is perfect for various electronic projects. The high-quality design and advanced technology of Onsemi ensure that you are getting a top-notch product that will meet your needs. Upgrade your electronics with the NTHS5443T1 and experience the difference in quality and performance today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are commonly used in low-power applications, making this product suitable for switching operations with lower power requirements.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide protection against reverse current flow, adding versatility to the application possibilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and efficient operation.

Surface Mount: YES

Being surface mountable simplifies the assembly process and allows for more compact and efficient PCB designs.

Maximum Power Dissipation (Abs): 0.7 W

With a low power dissipation, this FET helps in reducing heat generation and improving overall efficiency.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this FET suitable for a variety of applications, including those that require extended temperature performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTHS5443T1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

C BEND

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS5443T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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