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NTHS4111PT1G

Onsemi

NTHS4111PT1G by Onsemi

NTHS4111PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.045 ohm RDS(on), and 3.3A ID. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,177 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

2,177

-

$0.238

$0.197

$0.176

DigiKey

USA . 2,177 parts In-Stock

1+ parts

-

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$0.300

2,177

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$0.300

Verical

USA . 2,177 parts In-Stock

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$0.220

2,177

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$0.220

Distributors (In-Stock)

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Digiode

USA . 1,090 parts In-Stock

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$0.185

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1,090

$0.185

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Chip Stock

USA . 41,000 parts In-Stock

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41,000

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Vyrian

USA . 10,483 parts In-Stock

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10,483

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Distributors (Availability)

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Corphita

USA . 645 parts In-Stock

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$0.176

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645

$0.176

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Corohmni

South Africa . 343 parts In-Stock

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$0.195

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343

$0.195

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AZTECH Wire

Italy . 372 parts In-Stock

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$22.030

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372

$22.030

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QUARKTWIN TECHNOLOGY LTD

USA . 8,951 parts In-Stock

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Problanco Electronics

Mexico . 7,982 parts In-Stock

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Kulean Microsystems

USA . 6,308 parts In-Stock

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TANS Electronics

Latvia . 3,843 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Continental Prestige Electronics

USA . 2,177 parts In-Stock

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$0.179

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SupplyDigital Components

Austria . 824 parts In-Stock

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824

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UHIMA Technologies

Türkiye . 133 parts In-Stock

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Overview

Upgrade your electronic devices with the NTHS4111PT1G by Onsemi, a high-quality P-channel small signal field effect transistor with a built-in diode. Perfect for switching applications, this enhancement mode transistor offers a maximum drain current of 3.3A and a low on resistance of 0.045 ohm. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust that this transistor will deliver reliable performance. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the NTHS4111PT1G provides the value, benefits, and advantages you need to take your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, making it easy to handle and more resistant to physical damage.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their lower resistance when conducting, which can lead to improved efficiency and lower power consumption in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the design and layout of circuits, saving space and potentially reducing costs of additional diodes.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it suitable for various switching tasks.

Surface Mount: YES

Being surface mountable allows for easier and more automated assembly processes, making it ideal for high-volume production applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage applications without risking damage, ensuring more reliable performance in varying conditions.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and space-saving design, making it easier to integrate into electronic circuits with limited space.

Terminal Form: C BEND

The C bend terminal form provides secure connections, reducing the risk of loose connections or disconnections in use, enhancing the overall reliability of the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are known for their low ON-state resistance, making them suitable for high-speed switching applications and minimizing power losses.

No. of Terminals: 8

Having 8 terminals allows for more versatile circuit configurations and connection options, providing greater flexibility in designing electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, making it easier to fit into compact devices or densely populated circuit boards while maintaining high performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, making the transistor suitable for demanding applications where stable performance is essential.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, ensuring long-term stability and consistent operation of the transistor.

Terminal Finish: TIN

Tin terminal finish provides good solderability, ensuring secure and stable connections during assembly and throughout the lifespan of the transistor.

Maximum Drain Current (ID): 3.3 A

With a maximum drain current of 3.3A, this transistor can handle higher current loads, making it suitable for applications requiring more power or current handling capabilities.

Maximum Drain-Source On Resistance: 0.045 ohm

The low drain-source on resistance of 0.045 ohm minimizes power losses and heat generation, improving efficiency and performance in high-current applications.

Terminal Position: DUAL

Having dual terminal positions allows for more versatile mounting and connection options, making it easier to integrate the transistor into different circuit layouts.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures reliable soldering and assembly processes, preventing damage to the transistor during manufacturing and ensuring consistent performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTHS4111PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

3.3 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-C8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS4111PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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