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NTHS4501NT1G

Onsemi

NTHS4501NT1G by Onsemi

NTHS4501NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 0.038 ohm RDS(on), and 4.9A ID. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style.

Median Price

$0.211

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 462,350 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

462,350

-

$0.211

$0.175

$0.156

DigiKey

USA . 462,350 parts In-Stock

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$0.260

462,350

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$0.260

Verical

USA . 460,870 parts In-Stock

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$0.195

460,870

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$0.195

Distributors (In-Stock)

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Digiode

USA . 1,961 parts In-Stock

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$0.164

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1,961

$0.164

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Vyrian

USA . 2,417 parts In-Stock

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$0.173

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2,417

$0.173

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Chip Stock

USA . 78,000 parts In-Stock

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78,000

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ComSIT Distribution GmbH

Germany . 1,794 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 893 parts In-Stock

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$0.156

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893

$0.156

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Corohmni

South Africa . 403 parts In-Stock

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$0.173

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403

$0.173

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Continental Prestige Electronics

USA . 465,350 parts In-Stock

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$0.159

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465,350

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$0.159

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Kepictronics

USA . 29,767 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,657 parts In-Stock

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5,657

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 1,776 parts In-Stock

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1,776

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SupplyDigital Components

Austria . 844 parts In-Stock

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Problanco Electronics

Mexico . 826 parts In-Stock

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UHIMA Technologies

Türkiye . 699 parts In-Stock

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699

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Perfect Parts

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Kulean Microsystems

USA . 673 parts In-Stock

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673

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Overview

Discover the NTHS4501NT1G by Onsemi, a top-quality small signal field effect transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted industry leader, this N-CHANNEL transistor with a built-in diode is perfect for switching applications. With a low drain-source on resistance and high maximum drain current, this transistor ensures efficient operation. Its compact package shape and surface mount design make it easy to integrate into various electronic devices. Upgrade your projects with the NTHS4501NT1G and experience the superior quality and functionality that Onsemi products are known for.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity compared to P-channel transistors, making this product suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse current flow, enhancing the overall functionality of the transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power consumption, ideal for various electronic devices.

Surface Mount: YES

Surface-mount technology enables easy and compact PCB assembly, making this transistor suitable for space-constrained applications.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle higher voltages, increasing its versatility and reliability in different circuit designs.

No. of Terminals: 8

Having 8 terminals allows for greater connectivity options and flexibility in circuit design, making it suitable for complex electronic systems.

Maximum Drain Current (ID): 4.9 A

The high maximum drain current rating of 4.9 A ensures that this transistor can handle high power demands, making it suitable for power-sensitive applications.

Maximum Drain-Source On Resistance: 0.038 ohm

The low on-resistance of 0.038 ohm minimizes power loss and heat generation, improving the efficiency and performance of the transistor in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTHS4501NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.9 A

Maximum Drain-Source On Resistance:

.038 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTHS4501NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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