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NTS4001NT1

Onsemi

NTS4001NT1 by Onsemi

NTS4001NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, ideal for switching applications. With a min DS breakdown voltage of 30V, it operates in enhancement mode with max drain current of 0.27A and max power dissipation of 0.33W at 150 °C.

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Vyrian

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Digiode

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AZTECH Wire

Italy . 198 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 5,653 parts In-Stock

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SupplyDigital Components

Austria . 4,521 parts In-Stock

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Corohmni

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Corphita

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Overview

Elevate your electronic designs with the NTS4001NT1 by Onsemi - a high-quality Small Signal Field Effect Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this N-channel transistor is ideal for switching applications. With a built-in diode and resistor, this transistor provides added convenience and efficiency. Experience seamless integration with its surface mount capability and enhanced power dissipation. Trust Onsemi's expertise and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to environmental factors, ensuring the longevity of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them suitable for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Surface Mount: YES

Surface mount technology allows for easy integration into compact electronic devices.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage provides reliable operation in various voltage conditions.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and place on the PCB during assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections, enhancing the reliability of the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer fast switching speed and low ON-resistance, ideal for high-frequency applications.

Maximum Drain Current (ID): 0.27 A

The high maximum drain current allows for handling higher loads in the circuit.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function in the circuit.

Maximum Power Dissipation (Abs): 0.33 W

The high maximum power dissipation ensures the transistor can handle heat dissipation effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides better performance characteristics compared to other types of FETs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in electronic components.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good solderability and corrosion resistance.

Maximum Drain-Source On Resistance: 2 ohm

Low ON-resistance helps minimize power dissipation and improve overall efficiency of the transistor in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for various connection options.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures stable solder joints during assembly and rework processes.

Maximum Feedback Capacitance (Crss): 12 pF

Low feedback capacitance minimizes the risk of signal distortion and improves the overall performance of the transistor in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS4001NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.27 A

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS4001NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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