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NTS4173PT1G

Onsemi

NTS4173PT1G by Onsemi

NTS4173PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 1.2A drain current. With a small outline package style and operating temperature of 150°C, it utilizes metal-oxide semiconductor technology for efficient performance.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,209 parts In-Stock

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$0.201

100+ parts

$0.078

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$0.057

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1,209

$0.201

$0.078

$0.057

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Mouser Electronics

USA . 46,721 parts In-Stock

1+ parts

$0.380

100+ parts

$0.148

1k+ parts

$0.098

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$0.062

46,721

$0.380

$0.148

$0.098

$0.062

DigiKey

USA . 21,537 parts In-Stock

1+ parts

$0.380

100+ parts

$0.147

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$0.097

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$0.070

21,537

$0.380

$0.147

$0.097

$0.070

Newark

USA . 10,659 parts In-Stock

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$0.403

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$0.170

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Future Electronics

Canada . 135,000 parts In-Stock

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Verical

USA . 33,000 parts In-Stock

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Master Electronics

USA . 33,000 parts In-Stock

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Farnell

UK . 16,565 parts In-Stock

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$0.258

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Element14

Singapore . 16,565 parts In-Stock

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$0.267

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Avnet

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Chip1Stop

Japan . 2,575 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 65 parts In-Stock

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$0.150

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65

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TME

Poland . 1,311 parts In-Stock

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$0.320

100+ parts

$0.096

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$0.079

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$0.069

1,311

$0.320

$0.096

$0.079

$0.069

Digiode

USA . 2,160 parts In-Stock

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$0.446

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IBS Electronics

USA . 263,615 parts In-Stock

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$0.540

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$0.173

263,615

$0.540

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Maritex

Poland . 9,652 parts In-Stock

1+ parts

$0.660

100+ parts

$0.156

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$0.118

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$0.102

9,652

$0.660

$0.156

$0.118

$0.102

ComSIT Distribution GmbH

Germany . 958,622 parts In-Stock

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Vyrian

USA . 93,356 parts In-Stock

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Chip Stock

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NAC Semi

USA . 36,000 parts In-Stock

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Flip Electronics

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Partservice

France . 3,000 parts In-Stock

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$0.121

Micros sp.j. W. Kędra i J. Lic

Poland . 2,795 parts In-Stock

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$0.130

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Avant Electronics Limited

UK . 2,500 parts In-Stock

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QIE Inc.

USA . 1,419 parts In-Stock

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Ampacity Inc.

Singapore . 48,905 parts In-Stock

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$0.075

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Semicontronic

India . 39,240 parts In-Stock

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Corohmni

South Africa . 441 parts In-Stock

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Argo Parts USA

USA . 1,820 parts In-Stock

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$0.149

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$0.145

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.311

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$0.296

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$0.296

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Corphita

USA . 1,234 parts In-Stock

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$0.423

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Continental Prestige Electronics

USA . 19,180 parts In-Stock

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$0.468

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$0.224

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$0.126

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$0.112

19,180

$0.468

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$0.126

$0.112

Aztec Data Supply Inc.

USA . 150 parts In-Stock

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$1.680

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Perfect Parts

USA . 744,452 parts In-Stock

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Infinite Electronics LLP (Excess)

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RC Electronics

USA . 64,507 parts In-Stock

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Eastek

USA . 51,000 parts In-Stock

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Lixinc

USA . 18,557 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 9,100 parts In-Stock

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SupplyDigital Components

Austria . 7,045 parts In-Stock

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Problanco Electronics

Mexico . 5,423 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

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Netroflash

USA . 2,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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TANS Electronics

Latvia . 745 parts In-Stock

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Kulean Microsystems

USA . 428 parts In-Stock

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UHIMA Technologies

Türkiye . 197 parts In-Stock

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Overview

Discover the NTS4173PT1G by Onsemi, a high-quality P-Channel small signal field effect transistor with a built-in diode for switching applications. Manufactured by Onsemi, this FET offers outstanding performance and reliability in a compact rectangular package, making it perfect for various electronic projects. With a maximum drain current of 1.2A and a low on-resistance of 0.15 ohms, this transistor provides excellent efficiency and power dissipation. Elevate your designs with the NTS4173PT1G and experience the benefits of enhanced functionality and versatility.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching operations.

Surface Mount: YES

Can be easily mounted on a circuit board for compact designs.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage for reliable performance.

Package Shape: RECTANGULAR

Allows for easy integration into circuit layouts.

Terminal Form: GULL WING

Facilitates efficient soldering and connection during assembly.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's operation.

Maximum Drain Current (Abs) (ID): 1.2 A

Capable of handling high current loads for various applications.

No. of Terminals: 3

Simplifies connection within a circuit.

Maximum Power Dissipation (Abs): 0.35 W

Efficiently dissipates heat for reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for high performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments.

Transistor Element Material: SILICON

Durable material for long-lasting performance.

Terminal Finish: MATTE TIN

Provides a reliable electrical connection.

Maximum Drain-Source On Resistance: 0.15 ohm

Low resistance for efficient conduction.

Terminal Position: DUAL

Offers flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during manufacturing.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS4173PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS4173PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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