Loading...

NTS4172NT1G

Onsemi

NTS4172NT1G by Onsemi

NTS4172NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.6A ID, and 0.093 ohm RDS(on). It is used for switching applications in enhancement mode, featuring a single configuration with built-in diode. The transistor comes in a small outline package with GULL WING terminals for surface mount assembly.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

3,000

-

$0.119

$0.099

$0.088

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

3,000

-

-

-

$0.150

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 546 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

546

$0.093

-

-

-

Vyrian

USA . 2,203 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

2,203

$0.098

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 768 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

768

$0.088

-

-

-

Corohmni

South Africa . 372 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

372

$0.098

-

-

-

Kepictronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Kulean Microsystems

USA . 6,866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,866

-

-

-

-

TANS Electronics

Latvia . 4,881 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,881

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

SupplyDigital Components

Austria . 1,802 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,802

-

-

-

-

Problanco Electronics

Mexico . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,400

-

-

-

-

UHIMA Technologies

Türkiye . 304 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

304

-

-

-

-

Overview

Unlock the power of small signal field effect transistors with the NTS4172NT1G by Onsemi. Crafted with precision and quality, this N-CHANNEL transistor offers a single configuration with a built-in diode for efficient switching applications. With a minimum DS breakdown voltage of 30V and maximum drain current of 1.6A, this small outline package is a game-changer in enhancing your electronic projects. Trust in Onsemi's legacy of excellence and innovation to elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are often preferred for switching applications due to their lower ON resistance and higher efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in preventing reverse current flow and protects the transistor from damage, improving overall performance and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast switching speed and high efficiency in various electronic circuits.

Surface Mount: YES

Surface mount package allows for easy and convenient PCB assembly, saving space and improving overall board layout.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor and easy placement on the PCB, optimizing space utilization in electronic designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure secure connections, making the transistor suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conductivity, enabling efficient switching performance in various applications.

No. of Terminals: 3

Three terminals provide the necessary connections for controlling the transistor's operation, ensuring compatibility with standard circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves board space and allows for high-density mounting, making it suitable for compact electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and fast switching speeds, enhancing overall efficiency and reliability.

Transistor Element Material: SILICON

Silicon material ensures high reliability, temperature stability, and efficiency, making it a suitable choice for various electronic applications.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability and durability in various operating environments.

Maximum Drain Current (ID): 1.6 A

Maximum drain current of 1.6A allows for handling higher current loads, making the transistor suitable for power-efficient switching applications.

Maximum Drain-Source On Resistance: 0.093 ohm

Low drain-source on resistance of 0.093 ohm minimizes power losses and improves efficiency in switching applications, ensuring optimal performance.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy integration into various electronic systems, enhancing versatility and usability.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS4172NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.093 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS4172NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8