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NTS4401NT1

Onsemi

NTS4401NT1 by Onsemi

NTS4401NT1 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a min DS breakdown voltage of 30V, max operating temperature of 150 °C, and a max drain current of 0.1A. This transistor has a single configuration with built-in diode and resistor in a surface-mount package ideal for enhancement mode operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,453 parts In-Stock

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Vyrian

USA . 286 parts In-Stock

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286

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Kulean Microsystems

USA . 8,370 parts In-Stock

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8,370

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TANS Electronics

Latvia . 7,273 parts In-Stock

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Problanco Electronics

Mexico . 5,239 parts In-Stock

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SupplyDigital Components

Austria . 2,577 parts In-Stock

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Corphita

USA . 2,036 parts In-Stock

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2,036

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UHIMA Technologies

Türkiye . 642 parts In-Stock

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Corohmni

South Africa . 204 parts In-Stock

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Overview

Discover the power of the NTS4401NT1 by Onsemi, a high-quality Small Signal Field Effect Transistor designed for switching applications. With its N-CHANNEL configuration, built-in diode and resistor, and enhancement mode operation, this transistor offers exceptional performance and reliability. Perfect for a wide range of electronic devices, this surface-mount component provides customers with superior functionality and value. Trust Onsemi's reputation for excellence and experience the benefits of the NTS4401NT1 in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: N-CHANNEL

Suitable for various types of electronic circuits and applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space.

Transistor Application: SWITCHING

Ideal for applications where rapid switching is required.

Surface Mount: YES

Allows for easy mounting on PCBs.

Maximum Drain Current (ID): 0.1 A

Can handle moderate current loads.

Maximum Drain-Source On Resistance: 2.7 ohm

Low on-resistance for efficient performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS4401NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

2.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS4401NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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