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NTS4001NT3G

Onsemi

NTS4001NT3G by Onsemi

NTS4001NT3G by Onsemi is a small signal N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.27A, and max operating temperature of 150°C. This enhancement mode transistor has a package style of small outline and matte tin terminal finish.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

NTS4001NT3G by Onsemi
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,289 parts In-Stock

1+ parts

$0.280

100+ parts

$0.106

1k+ parts

$0.069

10k+ parts

$0.048

8,289

$0.280

$0.106

$0.069

$0.048

Mouser Electronics

USA . 1,336 parts In-Stock

1+ parts

$0.320

100+ parts

$0.131

1k+ parts

$0.074

10k+ parts

$0.044

1,336

$0.320

$0.131

$0.074

$0.044

Flip Electronics (Authorized)

USA . 999,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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999,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

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15

$0.108

-

-

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Digiode

USA . 1,837 parts In-Stock

1+ parts

$0.352

100+ parts

-

1k+ parts

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10k+ parts

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1,837

$0.352

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Flip Electronics

USA . 1,011,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,011,000

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-

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Vyrian

USA . 339,634 parts In-Stock

1+ parts

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339,634

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 61 parts In-Stock

1+ parts

$0.104

100+ parts

-

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61

$0.104

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

$0.102

10k+ parts

-

100

$0.106

-

$0.102

-

Argo Parts USA

USA . 3,002 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

$0.105

3,002

$0.108

-

-

$0.105

Continental Prestige Electronics

USA . 600 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

600

$0.108

-

-

$0.106

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.110

100+ parts

$0.110

1k+ parts

$0.110

10k+ parts

-

5,000

$0.110

$0.110

$0.110

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Ampacity Inc.

Singapore . 339,750 parts In-Stock

1+ parts

$0.315

100+ parts

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1k+ parts

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10k+ parts

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339,750

$0.315

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Corphita

USA . 1,422 parts In-Stock

1+ parts

$0.333

100+ parts

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10k+ parts

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1,422

$0.333

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Aztec Data Supply Inc.

USA . 2,593 parts In-Stock

1+ parts

$1.137

100+ parts

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2,593

$1.137

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Kulean Microsystems

USA . 8,316 parts In-Stock

1+ parts

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8,316

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TANS Electronics

Latvia . 7,439 parts In-Stock

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7,439

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-

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Problanco Electronics

Mexico . 5,332 parts In-Stock

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5,332

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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SupplyDigital Components

Austria . 2,160 parts In-Stock

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2,160

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Lixinc

USA . 2,072 parts In-Stock

1+ parts

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2,072

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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312

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Overview

Enhance your electronic projects with the NTS4001NT3G by Onsemi, a high-quality Small Signal Field Effect Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL FET is perfect for switching applications and features a built-in diode and resistor for added convenience. With its small outline package and gull wing terminals, this transistor is easy to install and offers maximum power dissipation of 0.33 W. Trust Onsemi's expertise and experience to bring value and efficiency to your projects with the NTS4001NT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and low resistance, ideal for many switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating necessary components in one package, saving space and reducing assembly time.

Transistor Application: SWITCHING

Designed specifically for switching purposes, ensuring reliable and efficient performance in such applications.

Surface Mount: YES

Ease of installation and space-saving design, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 30 V

Provides a safety margin for voltage spikes and ensures proper functionality in various voltage environments.

Package Shape: RECTANGULAR

Allows for easy placement on circuit boards and efficient use of space in electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding environments.

Maximum Drain-Source On Resistance: 2 ohm

Low resistance leads to efficient power management and reduced heat generation in the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTS4001NT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTS4001NT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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