Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SZNUD3105DMT1G
Onsemi
SZNUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for AEC-Q101 compliant automotive electronics.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
6 V
.5 A
1.3 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G6
e3
1
2
6
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
AEC-Q101
YES
Matte Tin (Sn) - annealed
GULL WING
DUAL
SWITCHING
SILICON
NUS3116MTR2G
NUS3116MTR2G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5.47A Drain Current, and 0.05 ohm On Resistance. With ENHANCEMENT MODE operation and 150 °C max temp, it's ideal for high-power switching circuits in compact designs.
SINGLE WITH BUILT-IN DIODE
12 V
5.47 A
4.4 A
.05 ohm
S-XBCC-N8
8
150 Cel
UNSPECIFIED
SQUARE
CHIP CARRIER
260
P-CHANNEL
1.7 W
Not Qualified
Other Transistors
TIN
NO LEAD
BOTTOM
NTLUD3A260PZTAG
NTLUD3A260PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a square package and operates in ENHANCEMENT MODE for efficient performance.
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
1.7 A
1.3 A
.2 ohm
S-PDSO-N6
1.3 W
MATTE TIN
30
NTLUD3A260PZTBG
NTLUD3A260PZTBG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a Drain terminal connection and operates in ENHANCEMENT MODE.
NTF2955PT1G
NTF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 1.7A max drain current, and 0.185 ohm max on resistance. This enhancement mode transistor comes in a small outline package with gull wing terminals for surface mount assembly.
60 V
.185 ohm
TO-261AA
R-PDSO-G4
4
MCH3376-TL-W
MCH3376-TL-W by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology.
SINGLE
1.5 A
e6
.8 W
TIN BISMUTH
NTHD4401PT3G
NTHD4401PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 0.155 ohm max drain-source resistance, and 2.1A max drain current. Its small outline package makes it suitable for surface mount designs.
2.1 A
.155 ohm
50 pF
R-PDSO-C8
C BEND
MCH3377-TL-W
MCH3377-TL-W by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3A Drain Current, and 0.083 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with ENHANCEMENT MODE technology.
3 A
.083 ohm
R-PDSO-F3
3
1 W
FLAT
NTMFS4847NAT3G
NTMFS4847NAT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package with PLASTIC/EPOXY body material and TIN terminal finish for surface mount assembly.
30 V
11.5 A
.0062 ohm
R-PDSO-F5
5
MCH3474-TL-E
MCH3474-TL-E by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4A ID, and 0.05 ohm RDS. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features ENHANCEMENT MODE operation in SMALL OUTLINE package suitable for surface mount assembly.
4 A
Tin/Bismuth (Sn/Bi)
MCH3477-TL-E
MCH3477-TL-E by Onsemi is a N-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic circuits requiring high power handling in compact designs.
4.5 A
FET General Purpose Power
NTGS3443T2G
NTGS3443T2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A ID. Ideal for SWITCHING applications, it features 0.065 ohm RDS(ON) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and a built-in DIODE for efficient performance.
ULTRA LOW RESISTANCE
2.2 A
.065 ohm
Tin (Sn)
NTGS4111PT2G
NTGS4111PT2G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it features a 0.06 ohm on resistance and operates in enhancement mode. This small outline transistor has 6 terminals, GULL WING form, and built-in diode for efficient performance.
2.6 A
.06 ohm
PCP1403-TD-H
PCP1403-TD-H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 4.5A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 3.5W. Suitable for surface mount designs in various electronic circuits.
.117 ohm
TO-243AA
R-PSSO-F3
3.5 W
NTGD3147FT1G
NTGD3147FT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.145 ohm RDS(ON). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals.
.145 ohm
NTGD3149CT1G
NTGD3149CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 2.4A max drain current, and 0.06 ohm on-resistance. Ideal for surface mount designs requiring high performance in a compact square package.
2.4 A
S-PDSO-G6
N-CHANNEL AND P-CHANNEL
NTGD4169FT1G
NTGD4169FT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max Drain Current of 2.6A and Drain-Source On Resistance of 0.09 ohm. This ENHANCEMENT MODE transistor operates at up to 150 °C, making it suitable for various electronic devices.
.09 ohm
.9 W
NTHD2110TT1G
NTHD2110TT1G by Onsemi is a P-CHANNEL FET with 12V DS breakdown voltage and 4.5A max drain current. Ideal for switching applications, it features a 0.04 ohm on-resistance and comes in a small outline package with 8 terminals.
.04 ohm
NTMD4184PFR2G
NTMD4184PFR2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 4A Drain Current, 0.095 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.31W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in a small outline package.
2.3 A
.095 ohm
80 pF
R-PDSO-G8
2.31 W
NTMD6601NR2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 2; No. of Terminals: 8;
80 V
1.1 A
.215 ohm
30 pF
NTMFS4846NT1G
NTMFS4846NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 100A Drain Current, and 0.0051 ohm On Resistance. Ideal for SWITCHING applications due to its 55.5W Power Dissipation, ENHANCEMENT MODE operation, and DUAL Terminal Position.
100 A
.0051 ohm
55.5 W
NTMFS4847NT1G
NTMFS4847NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0062 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at up to 150 °C, it's a high-power transistor in SMALL OUTLINE package.
85 A
48.1 W
NTMFS4849NT1G
NTMFS4849NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 71A Drain Current. Ideal for SWITCHING applications, it features 0.0079 ohm RDS(ON) and 42.4W Power Dissipation in a SMALL OUTLINE package.
71 A
.0079 ohm
42.4 W
NTMS4176PR2G
NTMS4176PR2G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 7.3A max drain current, and 0.018 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
7.3 A
5.5 A
.018 ohm
2.5 W
NTMS4872NR2G
NTMS4872NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 10.2A Drain Current, ideal for SWITCHING applications. It features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.4W. This small outline transistor has GULL WING terminals and can handle up to 150 °C operating temperature.
10.2 A
6 A
.0135 ohm
200 pF
2.4 W
NTR3161NT1G
NTR3161NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150 °C.
3.3 A
TO-236AB
R-PDSO-G3
1.25 W
Matte Tin (Sn)
NTR3162PT1G
NTR3162PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.07 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.25W and operating temperature up to 150 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
.07 ohm
NTR3162PT3G
NTR3162PT3G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.2A and 0.07 ohm on-resistance, operating in enhancement mode at up to 150 °C. This small outline transistor with gull wing terminals is designed for high power dissipation of 1.25W in surface mount configurations.
NTR4170NT3G
NTR4170NT3G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A max drain current, and 0.055 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at up to 150 °C, making it suitable for various electronic devices.
3.2 A
.055 ohm
NTR4171PT3G
NTR4171PT3G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.075 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can handle up to 150 °C temperature.
.075 ohm
NTMFS4921NT3G
NTMFS4921NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.0088A ID, and 0.0108 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Its RECTANGULAR package with 5 terminals is suitable for surface mount assembly.
.0088 A
.0108 ohm
NTTFS4928NTWG
NTTFS4928NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 37A Drain Current, and 0.0135 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150 °C max temp.
37 A
S-PDSO-F5
20.8 W
NTGS3455T1
The Onsemi NTGS3455T1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can withstand temperatures up to 150 °C.
1.75 A
2.5 A
.1 ohm
e0
240
.5 W
Tin/Lead (Sn80Pb20)
NTHD5904T1
NTHD5904T1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 3.1A, on-resistance of 0.075 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 150 °C operating temperature, making it suitable for various electronic devices.
3.1 A
R-XDSO-C8
235
.6 W
TIN LEAD
NTHD5905T1
NTHD5905T1 by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode for switching applications. Features include 8V DS breakdown voltage, 3A max drain current, and 0.09 ohm max on resistance. Ideal for small outline packages in enhancement mode operation up to 150 °C.
8 V
NTHS5402T1
NTHS5402T1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.035 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This RECTANGULAR package has 8 terminals and built-in diode, suitable for surface mount technology.
4.9 A
.035 ohm
.7 W
NTHS5443T1
NTHS5443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.6A Drain Current, and 0.065 ohm On Resistance. Ideal for small outline packages with operating temperature up to 150 °C.
LOGIC LEVEL COMPATIBLE
3.6 A
NTHS5445T1
NTHS5445T1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 5.2A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR package with DUAL terminals is designed for high-power efficiency in various electronic devices.
5.2 A
NTMS3P03R2
NTMS3P03R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.86A Drain Current, and 0.085 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET in PLASTIC/EPOXY package is ideal for high-power switching circuits.
AVALANCHE RATED
3.86 A
2.34 A
.085 ohm
135 pF
.73 W
NTMSD3P102R2
NTMSD3P102R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers reliable performance in small outline packages at up to 150 °C.
2 W
Tin/Lead (Sn/Pb)
NTQD6866R2
NTQD6866R2 by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.032ohm max on resistance and can handle up to 0.78W power dissipation at 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.9 A
4.7 A
.032 ohm
175 pF
.78 W
NTQS6463R2
NTQS6463R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 6.2A, 0.02 ohm RDS(on), and operates in ENHANCEMENT MODE. This RECTANGULAR package has GULL WING terminals and can withstand up to 150 °C operating temperature.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
6.2 A
.02 ohm
.67 W
NTTS2P03R2
NTTS2P03R2 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 2.1A, 0.085 ohm RDS(on), and operates in enhancement mode. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150°C.
S-PDSO-G8
NTTD1P02R2
NTTD1P02R2 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1.45A max drain current, and 0.16 ohm max on resistance. Ideal for switching applications, it features a small outline package with GULL WING terminals and operates in enhancement mode up to 150 °C.
1.45 A
.16 ohm
NTHD4N02FT1
NTHD4N02FT1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.1A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.1W and can withstand temperatures up to 150 °C.
2.9 A
.08 ohm
2.1 W
NTR0202PLT1
NTR0202PLT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode for efficient performance.
.4 A
.8 ohm
.225 W
NTR1P02T1
NTR1P02T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor with GULL WING terminals is designed for high temperature environments up to 150 °C.
1 A
.18 ohm
.4 W
NTR1P02T3
NTR1P02T3 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 1A Drain Current, and 0.18 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.
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