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NTMSD3P102R2

Onsemi

NTMSD3P102R2 by Onsemi

NTMSD3P102R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers reliable performance in small outline packages at up to 150 °C.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,466 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

2,466

-

$0.238

$0.197

$0.176

DigiKey

USA . 2,466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.300

2,466

-

-

-

$0.300

Verical

USA . 2,466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.220

2,466

-

-

-

$0.220

Distributors (In-Stock)

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Digiode

USA . 403 parts In-Stock

1+ parts

$0.185

100+ parts

-

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403

$0.185

-

-

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Vyrian

USA . 5,072 parts In-Stock

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5,072

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Distributors (Availability)

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Corphita

USA . 2,020 parts In-Stock

1+ parts

$0.176

100+ parts

-

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2,020

$0.176

-

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Corohmni

South Africa . 58 parts In-Stock

1+ parts

$0.195

100+ parts

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58

$0.195

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AZTECH Wire

Italy . 1,174 parts In-Stock

1+ parts

$10.720

100+ parts

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1,174

$10.720

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Problanco Electronics

Mexico . 8,313 parts In-Stock

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8,313

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Kulean Microsystems

USA . 7,724 parts In-Stock

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7,724

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SupplyDigital Components

Austria . 7,081 parts In-Stock

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Kepictronics

USA . 2,993 parts In-Stock

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2,993

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Continental Prestige Electronics

USA . 2,466 parts In-Stock

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$0.179

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2,466

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$0.179

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TANS Electronics

Latvia . 1,340 parts In-Stock

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1,340

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UHIMA Technologies

Türkiye . 306 parts In-Stock

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306

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Overview

Discover the NTMSD3P102R2 by Onsemi, a top-notch P-Channel Small Signal Field Effect Transistor designed for switching applications. Manufactured with precision using high-quality materials, this transistor offers enhanced performance and reliability. With a built-in diode, it maximizes efficiency while delivering a maximum drain current of 2.34 A and a low drain-source on resistance of 0.085 ohm. Ideal for a variety of electronic projects, this transistor is the perfect choice for those seeking exceptional value and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for internal components and ensures durability.

Polarity or Channel Type: P-CHANNEL

Allows for efficient and effective switching operations.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and adds versatility to the transistor's application.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable performance in such applications.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating range and protection for the transistor.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuits.

Maximum Drain Current (Abs) (ID): 2.34 A

Can handle high current loads, making it suitable for various applications.

Maximum Power Dissipation (Abs): 2 W

Efficiently handles power dissipation, ensuring the transistor operates within safe limits.

Operating Mode: ENHANCEMENT MODE

Enhances the transistor's performance and efficiency in different operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers good performance and efficiency compared to other transistor technologies.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliability.

Transistor Element Material: SILICON

Provides good electrical properties and thermal stability for consistent performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures good conductivity and solderability for easy installation.

Maximum Drain-Source On Resistance: 0.085 ohm

Low resistance allows for efficient current flow and minimal power loss.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during manufacturing processes.

Maximum Feedback Capacitance (Crss): 135 pF

Low feedback capacitance reduces signal distortion and improves switching speed.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMSD3P102R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.34 A

Maximum Drain Current (ID):

2.34 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

135 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMSD3P102R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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