Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTHD4401PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 0.155 ohm max drain-source resistance, and 2.1A max drain current. Its small outline package makes it suitable for surface mount designs.
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$17.630
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$0.209
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UHIMA Technologies
Provides a durable and lightweight housing for the transistor, making it suitable for various applications.
Allows for efficient switching operations and can be used in circuits where P-channel transistors are required.
Offers flexibility in circuit design and includes a built-in diode for protection and improved performance.
Designed specifically for switching applications, ensuring reliable performance in such scenarios.
Provides a safe operating range for the transistor to prevent damage from overvoltage conditions.
Allows for easy placement and mounting on PCBs or other electronic assemblies.
Enables the transistor to operate efficiently in enhancement mode, enhancing its performance.
Capable of handling high drain currents, making it suitable for applications that require such current ratings.
Low on-resistance ensures minimal power loss and efficient operation in switching applications.
Dual terminal position allows for easy connections and versatility in circuit layouts.
Low feedback capacitance helps in reducing signal distortion and improves overall performance.
Small Signal Field Effect Transistors (FET) NTHD4401PT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTHD4401PT3G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Multiple Devices 01/Oct/2008
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
NDT2955
Onsemi
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
General Instrument
2N2222A
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
SMBJ18CA
Pro-an Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
Cheng-yi Electronic
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
Sangdest Microelectronics (Nanjing)
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Bytesonic Electronics
BSS84
Micro Commercial Components
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-236AB;
2N7000/D26Z
National Semiconductor
2N7000/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A ID. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 0.4W.
BSS84AKM,315
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
MMBFJ112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
SI2319DS-T1-E3
Vishay Intertechnology
SI2319DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.082 ohm On Resistance. Suitable for surface mount, it has a max operating temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
DMP6023LFG-7
DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.
LND150N3-GP013
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 1 pF; Maximum Drain Current (ID): .03 A; Terminal Form: THROUGH-HOLE;
FDN304PZ
FDN304PZ by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.4A and 0.052 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with gull wing terminals is designed for surface mount configurations.
BSS138WQ-7-F
BSS138WQ-7-F by Diodes Inc. is a small signal N-channel FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.2W and can handle a max drain current of 0.2A.
BS170_D27Z
BS170_D27Z by Fairchild Semiconductor is a N-CHANNEL small signal FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.5A.
NX3008NBKS,115
NXP Semiconductors
NXP Semiconductors' NX3008NBKS,115 is a N-CHANNEL FET for SWITCHING applications. With 30V DS Breakdown Voltage and 0.35A Drain Current, it operates in ENHANCEMENT MODE. Featuring GULL WING terminals and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline packages in automotive electronics.
ZVN3306FTA
ZVN3306FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.15A Drain Current, and 5 ohm On Resistance. It's used in small signal applications due to its PLASTIC/EPOXY package, GULL WING terminals, and ENHANCEMENT MODE operation for efficient performance at up to 150°C.
BSN20BKR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.2 ohm;
SI4532CDY-T1-GE3
Vishay Siliconix
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): 6 A; Maximum Drain-Source On Resistance: .047 ohm;
FDC2512
The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
FDS6912A
FDS6912A by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 6A max drain current, and 0.028 ohm max on resistance. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
LND150N3-GP003
Microchip Technology
LND150N3-GP003 by Microchip Technology is a small signal N-CHANNEL FET with a min DS breakdown voltage of 500V. It is commonly used for switching applications and operates in depletion mode. With a max operating temperature of 150°C, it has a max drain current of 0.03A and a max drain-source on resistance of 1000Ω.
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
FDG8850NZ
FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
LND150N3-G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .03 A; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY;
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NTHD4102PT1G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; JESD-30 Code: R-XDSO-C8; Qualification: Not Qualified;
NTHD5904T1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 235;
NTHD5904NT3G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 2.5 A;
NTHD4N02FT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
NTHD5904NT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
NTHD4502NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Maximum Drain Current (ID): 2.2 A; Minimum DS Breakdown Voltage: 30 V;
NTHD5902T1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN LEAD;
NTHD4N02FT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .91 W; Terminal Finish: TIN; Maximum Drain-Source On Resistance: .08 ohm;
NTHD4102PT3G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: UNSPECIFIED;
NTHD5904NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Qualification: Not Qualified; JESD-30 Code: R-XDSO-C8;
NTHD5903T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
NTHD4401PT1G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
NTHD5904NT3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
NTHD4102PT1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-XDSO-C8;
NTHD3133PFT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain-Source On Resistance: .08 ohm; No. of Terminals: 8;
NTHD2110TT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .04 ohm; Minimum DS Breakdown Voltage: 12 V; Terminal Position: DUAL;
NTHD3133PFT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
NTHD4401PT1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Form: C BEND; Package Style (Meter): SMALL OUTLINE;
NTHD5903T1G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
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