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NTR0202PLT1

Onsemi

NTR0202PLT1 by Onsemi

NTR0202PLT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode for efficient performance.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 69,695 parts In-Stock

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Vyrian

USA . 10,102 parts In-Stock

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Odi Ramu Company

Canada . 5,988 parts In-Stock

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Florida Circuit

USA . 2,944 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 810 parts In-Stock

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$14.520

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Component Stockers USA

USA . 594 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,629 parts In-Stock

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Kulean Microsystems

USA . 5,455 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,235 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,030 parts In-Stock

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SupplyDigital Components

Austria . 1,622 parts In-Stock

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Corphita

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Futuretech Components

Singapore . 504 parts In-Stock

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South Africa . 420 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of advanced technology with the NTR0202PLT1 by Onsemi. This high-quality P-channel FET offers unrivaled reliability and performance, making it the ideal choice for a wide range of switching applications. With its built-in diode and enhancement mode operation, this transistor ensures seamless functionality and efficiency. Trust in Onsemi's reputation for excellence and innovation, and experience the unparalleled value that the NTR0202PLT1 brings to your projects. Elevate your designs with this cutting-edge component and take your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching capabilities in P-Channel circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space with the built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Easy to mount on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 20 V

Can withstand up to 20 volts without breakdown, providing a wide range of operating voltages.

Package Shape: RECTANGULAR

Compact design for efficient use of space on the circuit board.

Terminal Form: GULL WING

Easy to solder onto the circuit board, ensuring a secure connection.

Operating Mode: ENHANCEMENT MODE

Enhances performance in certain applications, offering improved efficiency.

Maximum Drain Current (Abs): 0.4 A

Capable of handling up to 0.4 amps of current, suitable for low-power applications.

No. of Terminals: 3

Simplified design with only three terminals, reducing complexity in circuit layout.

Maximum Power Dissipation (Abs): 0.225 W

Can dissipate up to 0.225 watts of power, ensuring reliable operation under various conditions.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications, ideal for small electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient switching and control of current flow.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, suitable for a wide range of environments.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Terminal Finish: TIN LEAD

Tin lead finish for improved solderability and durability of the terminals.

Maximum Drain-Source On Resistance: 0.8 ohm

Low on-resistance for efficient current flow, reducing power loss and improving performance.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit design and connection options.

Peak Reflow Temperature °C: 235

Can withstand reflow soldering processes up to 235 °C, ensuring reliable assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR0202PLT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR0202PLT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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