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NTR0202PLT1G

Onsemi

NTR0202PLT1G by Onsemi

NTR0202PLT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150°C max temp, it's an ENHANCEMENT MODE transistor with Matte Tin finish.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 306,580 parts In-Stock

1+ parts

$0.100

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$0.100

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$0.100

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306,580

$0.100

$0.100

$0.100

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Mouser Electronics

USA . 98,024 parts In-Stock

1+ parts

$0.590

100+ parts

$0.228

1k+ parts

$0.157

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$0.124

98,024

$0.590

$0.228

$0.157

$0.124

DigiKey

USA . 2,051 parts In-Stock

1+ parts

$0.590

100+ parts

$0.232

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$0.156

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2,051

$0.590

$0.232

$0.156

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Arrow

USA . 93,000 parts In-Stock

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$0.115

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Verical

USA . 93,000 parts In-Stock

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$0.039

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$0.039

Chip1Stop

Japan . 84,000 parts In-Stock

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$0.090

84,000

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$0.090

Master Electronics

USA . 21,000 parts In-Stock

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$0.129

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$0.110

21,000

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$0.129

$0.110

Newark

USA . 10,500 parts In-Stock

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Farnell

UK . 10,500 parts In-Stock

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$0.087

10,500

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$0.087

Element14

Singapore . 10,479 parts In-Stock

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$0.315

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$0.212

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$0.208

10,479

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$0.315

$0.212

$0.208

EBV Elektronik

Germany . 3,000 parts In-Stock

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Distributors (In-Stock)

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Vyrian

USA . 800 parts In-Stock

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$0.084

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800

$0.084

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Maritex

Poland . 1,145 parts In-Stock

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$0.106

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1,145

$0.106

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TME

Poland . 576 parts In-Stock

1+ parts

$0.140

100+ parts

$0.072

1k+ parts

$0.055

10k+ parts

$0.043

576

$0.140

$0.072

$0.055

$0.043

Digiode

USA . 720 parts In-Stock

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$0.429

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720

$0.429

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Component Electronics Inc.

Canada . 486 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

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$2.500

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486

$3.850

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Chip Stock

USA . 64,070 parts In-Stock

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Component Sense

UK . 22,531 parts In-Stock

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Flip Electronics

USA . 11,380 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.111

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,938 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 952 parts In-Stock

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Holdelec - ElecDif-Pro

France . 500 parts In-Stock

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Bristol Electronics

USA . 475 parts In-Stock

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$0.169

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$0.101

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475

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$0.101

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Semi Source

USA . 167 parts In-Stock

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Elcom Components

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Nova Conductors

Japan . 44 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 39,579 parts In-Stock

1+ parts

$0.054

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Corohmni

South Africa . 481 parts In-Stock

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$0.084

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481

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Continental Prestige Electronics

USA . 14,245 parts In-Stock

1+ parts

$0.391

100+ parts

$0.198

1k+ parts

$0.112

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$0.093

14,245

$0.391

$0.198

$0.112

$0.093

Corphita

USA . 549 parts In-Stock

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$0.407

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549

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Perfect Parts

USA . 528,604 parts In-Stock

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528,604

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RC Electronics

USA . 55,916 parts In-Stock

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 7,939 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Lixinc

USA . 7,197 parts In-Stock

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Kepictronics

USA . 6,198 parts In-Stock

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Problanco Electronics

Mexico . 6,170 parts In-Stock

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TANS Electronics

Latvia . 5,484 parts In-Stock

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Argo Parts USA

USA . 5,064 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,703 parts In-Stock

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Kulean Microsystems

USA . 3,106 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

Spain . 2,985 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,850 parts In-Stock

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Futuretech Components

Singapore . 2,180 parts In-Stock

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Onsemi's NTR0202PLT1G P-CHANNEL FET is a game-changer in the world of small signal transistors. With a focus on quality and reliability, Onsemi has crafted a product that offers unmatched performance in switching applications. The built-in diode and enhancement mode operation make this transistor a versatile choice for a variety of electronic projects. From its high power dissipation capabilities to its compact package shape, the NTR0202PLT1G provides customers with exceptional value and convenience. Trust Onsemi to deliver cutting-edge technology that meets your needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are needed for proper circuit operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a built-in diode for reverse bias protection.

Transistor Application: SWITCHING

Optimized for switching applications, making it efficient and reliable in controlling currents.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and facilitating automated assembly.

Minimum DS Breakdown Voltage: 20 V

With a high breakdown voltage, it can withstand higher voltages without damage.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for various environments.

Maximum Drain Current (ID): 0.4 A

Capable of handling high drain currents, suitable for handling different loads.

Maximum Power Dissipation (Abs): 0.225 W

Efficient power handling capability, ensuring stable performance under varying power conditions.

Maximum Drain-Source On Resistance: 0.8 ohm

Low on-resistance minimizes power loss and heat generation, improving overall efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR0202PLT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR0202PLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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