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NTR0202PLT3

Onsemi

NTR0202PLT3 by Onsemi

NTR0202PLT3 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at max 150 °C, it's an ENHANCEMENT MODE transistor with SILICON element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,933 parts In-Stock

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Vyrian

USA . 1,763 parts In-Stock

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SupplyDigital Components

Austria . 7,028 parts In-Stock

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Kulean Microsystems

USA . 1,947 parts In-Stock

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Problanco Electronics

Mexico . 1,802 parts In-Stock

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Corphita

USA . 1,366 parts In-Stock

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TANS Electronics

Latvia . 1,001 parts In-Stock

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UHIMA Technologies

Türkiye . 912 parts In-Stock

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Corohmni

South Africa . 170 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi NTR0202PLT3 Small Signal Field Effect Transistor. Manufactured by Onsemi, a trusted leader in semiconductor technology, this P-CHANNEL transistor offers unparalleled quality and reliability. Ideal for switching applications, this single configuration FET comes with a built-in diode, enhancing its functionality. With a maximum drain current of 0.4 A and a maximum operating temperature of 150 °C, this transistor provides superior performance in a compact package. Experience the value and benefits of the NTR0202PLT3 by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Offers efficient control and operation in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and improves overall efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Enables easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 20 V

Meets the necessary voltage requirements for various applications.

Package Shape: RECTANGULAR

Facilitates space-saving installation on PCBs.

Terminal Form: GULL WING

Provides secure and reliable connections on PCBs.

Operating Mode: ENHANCEMENT MODE

Offers improved performance and efficiency in operation.

Maximum Drain Current (Abs) (ID): 0.4 A

Handles high current levels without overheating or damage.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 0.225 W

Ensures efficient power handling and minimal heat dissipation.

Package Style (Meter): SMALL OUTLINE

Saves space on PCBs and facilitates compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers reliable performance and efficiency in operation.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating environments and conditions.

Transistor Element Material: SILICON

Provides stable and consistent performance over time.

Terminal Finish: TIN LEAD

Ensures secure and reliable connections for optimal performance.

Maximum Drain-Source On Resistance: 0.8 ohm

Minimizes power loss and improves efficiency in circuit operation.

Terminal Position: DUAL

Allows for flexible and versatile circuit configurations.

Peak Reflow Temperature °C: 235

Can withstand high-temperature reflow processes during installation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR0202PLT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR0202PLT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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