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FDY3000NZ

Onsemi

FDY3000NZ by Onsemi

FDY3000NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.6A, on-resistance of 0.7 ohm, and operates at up to 150°C. With a small outline package style and matte tin finish, it offers reliable performance in various electronic devices.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,718 parts In-Stock

1+ parts

$0.209

100+ parts

$0.167

1k+ parts

$0.125

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$0.122

6,718

$0.209

$0.167

$0.125

$0.122

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.729

100+ parts

$1.643

1k+ parts

$1.643

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500

$1.729

$1.643

$1.643

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RS (Exports)

UK . 35,980 parts In-Stock

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$0.132

35,980

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$0.132

Chip1Stop

Japan . 11,530 parts In-Stock

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$0.182

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$0.129

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$0.122

11,530

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$0.182

$0.129

$0.122

Verical

USA . 6,718 parts In-Stock

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$0.167

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$0.125

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6,718

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$0.122

Rochester

USA . 648 parts In-Stock

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$0.154

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$0.128

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$0.114

648

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$0.114

Distributors (In-Stock)

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DF Sales Co.

USA . 62,160 parts In-Stock

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DF Sales Co.

USA . 62,160 parts In-Stock

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Digiode

USA . 727 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Cyclops Electronics Ltd

UK . 16,341 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 7,643 parts In-Stock

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Chip Stock

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Conversion2

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Inventory MP

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Semtec, LLC

USA . 1,740 parts In-Stock

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Speed Components Ltd

Israel . 1,000 parts In-Stock

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IBS Electronics

USA . 997 parts In-Stock

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$10.959

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997

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LIBRA Elektronik GmbH

Germany . 919 parts In-Stock

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North Shore Components

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Microfarads

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Atlantic Semiconductor

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Prism Electronics

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Corohmni

South Africa . 345 parts In-Stock

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$0.060

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Ampacity Inc.

Singapore . 8,421 parts In-Stock

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$0.091

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Corphita

USA . 1,820 parts In-Stock

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Semicontronic

India . 8,340 parts In-Stock

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$0.109

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Argo Parts USA

USA . 2,523 parts In-Stock

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$0.178

2,523

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Continental Prestige Electronics

USA . 2,170 parts In-Stock

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$0.183

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$0.179

2,170

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$0.179

Bastille Electronics

Australia . 200 parts In-Stock

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$0.183

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$0.174

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$0.165

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$0.163

200

$0.183

$0.174

$0.165

$0.163

Microchip USA

USA . 1,882 parts In-Stock

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$0.879

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Aztec Data Supply Inc.

USA . 3,596 parts In-Stock

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$1.716

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.729

100+ parts

$1.643

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$1.643

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500

$1.729

$1.643

$1.643

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Andel Nordic

Denmark . 2,547 parts In-Stock

1+ parts

$3.545

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$3.403

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$3.403

2,547

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$3.403

Perfect Parts

USA . 204,812 parts In-Stock

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Kepictronics

USA . 65,800 parts In-Stock

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Metaverse IC Inc.

Canada . 65,800 parts In-Stock

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RC Electronics

USA . 64,201 parts In-Stock

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GreenTree Electronics

Israel . 30,000 parts In-Stock

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iodParts Technologies Inc.

India . 21,680 parts In-Stock

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Lixinc

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Futuretech Components

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SupplyDigital Components

Austria . 6,488 parts In-Stock

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Kulean Microsystems

USA . 5,581 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,299 parts In-Stock

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TANS Electronics

Latvia . 3,071 parts In-Stock

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Assy Fe

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Robosynatics

Brazil . 2,168 parts In-Stock

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Lucentia Tech

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

USA . 1,997 parts In-Stock

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Problanco Electronics

Mexico . 1,085 parts In-Stock

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UHIMA Technologies

Türkiye . 829 parts In-Stock

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Formix International (Excess)

India . 3 parts In-Stock

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Overview

Elevate your electronic designs with the FDY3000NZ by Onsemi, a high-quality N-channel FET with built-in diode. Perfect for switching applications, this transistor offers exceptional performance and reliability. With a maximum drain current of 0.6A and a low on-resistance of 0.7 ohm, this small outline package is a versatile solution for a wide range of projects. Trust in Onsemi's expertise and elevate your designs to the next level with the FDY3000NZ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer lower resistance and higher efficiency compared to P-channel FETs, making them ideal for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient power control.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easy to control and offer high switching speeds, making them suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle heat effectively, ensuring reliable performance under varying operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate in demanding environments without performance degradation.

Maximum Drain-Source On Resistance: 0.7 ohm

The low on-resistance of 0.7 ohm minimizes power loss and heat generation, ensuring efficient power flow through the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDY3000NZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ESD PROTECTION

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.6 A

Maximum Drain Current (ID):

.6 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDY3000NZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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