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PCP1403-TD-H

Onsemi

PCP1403-TD-H by Onsemi

PCP1403-TD-H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 4.5A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 3.5W. Suitable for surface mount designs in various electronic circuits.

Median Price

$0.190

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 260,874 parts In-Stock

1+ parts

-

100+ parts

$0.197

1k+ parts

$0.164

10k+ parts

$0.146

260,874

-

$0.197

$0.164

$0.146

Verical

USA . 260,874 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.182

260,874

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-

-

$0.182

Distributors (In-Stock)

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Bristol Electronics

USA . 21 parts In-Stock

1+ parts

$0.750

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21

$0.750

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Chip Stock

USA . 51,500 parts In-Stock

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51,500

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Vyrian

USA . 10,977 parts In-Stock

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10,977

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Digiode

USA . 1,508 parts In-Stock

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1,508

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Distributors (Availability)

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Component Stockers USA

USA . 3,384 parts In-Stock

1+ parts

$0.200

100+ parts

$0.180

1k+ parts

$0.170

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-

3,384

$0.200

$0.180

$0.170

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AZTECH Wire

Italy . 1,076 parts In-Stock

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$18.930

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$18.930

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Perfect Parts

USA . 46,534 parts In-Stock

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Problanco Electronics

Mexico . 4,701 parts In-Stock

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Kulean Microsystems

USA . 1,958 parts In-Stock

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Corphita

USA . 1,951 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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TANS Electronics

Latvia . 537 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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SupplyDigital Components

Austria . 52 parts In-Stock

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Overview

Upgrade your electronics with the PCP1403-TD-H by Onsemi, a top-quality Small Signal Field Effect Transistor. Onsemi is known for its reliable products and this transistor is no exception. Perfect for applications requiring N-channel configuration, this transistor offers a maximum drain current of 4.5 A and a low on-resistance of 0.117 ohms. With a built-in diode and enhanced mode operation, this product ensures optimal performance. Trust Onsemi to deliver high-value components that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective packaging option for the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are commonly used in a variety of applications and offer good performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy circuit design and implementation.

Surface Mount: YES

Suitable for PCB mounting, making it easy to integrate into electronic devices.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltages, providing a reliable operation.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on PCB.

Terminal Form: FLAT

Flat terminals ensure easy soldering and connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers flexibility in controlling the transistor.

Maximum Drain Current (Abs) (ID): 4.5 A

Capable of handling high current loads, suitable for various applications.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Maximum Power Dissipation (Abs): 3.5 W

Can dissipate power efficiently, preventing overheating.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable and consistent performance.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, suitable for varied environments.

Transistor Element Material: SILICON

Silicon material ensures performance stability and durability.

Terminal Finish: TIN BISMUTH

Provides a reliable and durable finish for the terminals.

Maximum Drain-Source On Resistance: 0.117 ohm

Low on-resistance for efficient power handling.

Terminal Position: SINGLE

Single terminal position for simplified circuit design.

Case Connection: DRAIN

Drain connection for easy integration in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand a peak reflow temperature for a specified amount of time, ensuring proper soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for lead-free soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) PCP1403-TD-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.117 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

PCP1403-TD-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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