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PCP1302-TD-H

Onsemi

PCP1302-TD-H by Onsemi

PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.

Median Price

$0.131

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 63 parts In-Stock

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$0.131

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 5,616 parts In-Stock

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Digiode

USA . 1,296 parts In-Stock

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Continental Prestige Electronics

USA . 4,074 parts In-Stock

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$0.131

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$0.128

4,074

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$0.128

Argo Parts USA

USA . 1,667 parts In-Stock

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$0.131

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$0.127

1,667

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Netroflash

USA . 1,000 parts In-Stock

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$0.131

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$0.128

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$0.131

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Aztec Data Supply Inc.

USA . 114 parts In-Stock

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$0.360

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114

$0.360

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.647

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$1.499

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$1.351

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50

$1.647

$1.499

$1.351

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AZTECH Wire

Italy . 277 parts In-Stock

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$8.966

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Ampacity Inc.

Singapore . 679 parts In-Stock

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$41.050

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RC Electronics

USA . 60,581 parts In-Stock

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Perfect Parts

USA . 49,178 parts In-Stock

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S.R.D Solutions

India . 18,000 parts In-Stock

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Lixinc

USA . 7,528 parts In-Stock

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SupplyDigital Components

Austria . 7,085 parts In-Stock

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TANS Electronics

Latvia . 6,946 parts In-Stock

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Problanco Electronics

Mexico . 6,598 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,170 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Corphita

USA . 124 parts In-Stock

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Corohmni

South Africa . 51 parts In-Stock

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Overview

Upgrade your electronics with the PCP1302-TD-H by Onsemi, a high-quality P-Channel Field Effect Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this small signal FET is perfect for a variety of applications. With its built-in diode and 3A maximum drain current, this transistor ensures optimal functionality and efficiency. Experience the value and benefits of the PCP1302-TD-H for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are suitable for low-power applications and can be easily integrated into circuits that require this type of channel.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve overall circuit efficiency.

Minimum DS Breakdown Voltage: 60 V

The high minimum breakdown voltage allows for reliable operation in various voltage applications.

Maximum Drain Current (Abs): 3 A

The high maximum drain current capability ensures that the transistor can handle high power loads.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle heat dissipation effectively in demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows for reliable performance in elevated temperature environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good performance and reliability in various circuit applications.

Maximum Drain-Source On Resistance: 0.266 ohm

The low drain-source on resistance indicates efficient power handling capabilities and minimal power loss in the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) PCP1302-TD-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.266 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

PCP1302-TD-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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