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SZNUD3105DMT1G

Onsemi

SZNUD3105DMT1G by Onsemi

SZNUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for AEC-Q101 compliant automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 4,500 parts In-Stock

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Vyrian

USA . 2,660 parts In-Stock

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2,660

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Digiode

USA . 595 parts In-Stock

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595

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 2,232 parts In-Stock

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$1.809

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2,232

$1.809

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AZTECH Wire

Italy . 289 parts In-Stock

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$10.480

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289

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Ampacity Inc.

Singapore . 1,359 parts In-Stock

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$37.050

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1,359

$37.050

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Semicontronic

India . 1,204 parts In-Stock

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$62.050

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$60.499

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$60.188

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1,204

$62.050

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$60.188

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Problanco Electronics

Mexico . 3,647 parts In-Stock

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Continental Prestige Electronics

USA . 3,092 parts In-Stock

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TANS Electronics

Latvia . 2,880 parts In-Stock

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Kulean Microsystems

USA . 2,635 parts In-Stock

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UHIMA Technologies

Türkiye . 955 parts In-Stock

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Advanced Electronics

New Zealand . 750 parts In-Stock

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SupplyDigital Components

Austria . 723 parts In-Stock

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Corphita

USA . 699 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 177 parts In-Stock

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Argo Parts USA

USA . 154 parts In-Stock

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Bastille Electronics

Australia . 54 parts In-Stock

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Overview

Discover the superior quality and performance of the SZNUD3105DMT1G by Onsemi, a top-tier manufacturer known for delivering reliable electronic components. This N-CHANNEL field effect transistor offers seamless switching capabilities and comes in a convenient surface-mount package. Ideal for a variety of applications, this transistor provides enhanced efficiency and durability, making it a valuable asset for your projects. Upgrade your designs with the SZNUD3105DMT1G and experience the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the internal components, making it a reliable choice.

Polarity or Channel Type:

N-CHANNEL - This type of channel allows for efficient current flow and performance in switching applications.

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - This configuration offers added functionality and versatility for different circuit designs.

Transistor Application:

SWITCHING - Designed specifically for switching applications, ensuring optimal performance in this specific use case.

Surface Mount:

YES - Being surface mountable makes it easier to integrate into circuit boards, saving space and facilitating assembly.

Minimum DS Breakdown Voltage:

6 V - With a minimum breakdown voltage of 6V, this transistor can handle a wide range of voltage levels.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy mounting and placement on circuit boards.

Terminal Form:

GULL WING - The gull wing terminal form ensures secure connections and easy soldering during assembly.

Operating Mode:

ENHANCEMENT MODE - This mode provides better control and efficiency, enhancing overall performance.

No. of Elements:

2 - Having 2 elements allows for more complex circuit designs and applications.

No. of Terminals:

6 - With 6 terminals, this transistor offers flexibility in connecting to other components in a circuit.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and is ideal for compact designs.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - This technology ensures high performance and reliability in various applications.

Transistor Element Material:

SILICON - Silicon is a common and reliable material for transistors, ensuring longevity and stability.

Terminal Finish:

Matte Tin (Sn) - annealed - The matte tin finish provides a smooth and reliable surface for soldering connections.

Maximum Drain Current (ID):

0.5 A - With a maximum drain current of 0.5A, this transistor can handle moderate power loads effectively.

Maximum Drain-Source On Resistance:

1.3 ohm - The low on-resistance ensures minimal power loss and efficient operation.

Terminal Position:

DUAL - Dual terminal positions provide flexibility in circuit layout and design.

Reference Standard:

AEC-Q101 - Compliance with this standard ensures quality and reliability for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SZNUD3105DMT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SZNUD3105DMT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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