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NTMFS4847NT1G

Onsemi

NTMFS4847NT1G by Onsemi

NTMFS4847NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0062 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at up to 150 °C, it's a high-power transistor in SMALL OUTLINE package.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

9,000

-

$0.383

$0.318

$0.283

DigiKey

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

-

9,000

-

-

$0.480

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.398

10k+ parts

$0.354

9,000

-

-

$0.398

$0.354

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 832 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

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832

$0.298

-

-

-

Chip Stock

USA . 16,000 parts In-Stock

1+ parts

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16,000

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Vyrian

USA . 12,953 parts In-Stock

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12,953

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Cyclops Electronics Ltd

UK . 4,300 parts In-Stock

1+ parts

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100+ parts

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4,300

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 948 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

-

10k+ parts

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948

$0.283

-

-

-

Corohmni

South Africa . 259 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

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259

$0.314

-

-

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AZTECH Wire

Italy . 133 parts In-Stock

1+ parts

$10.010

100+ parts

-

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133

$10.010

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Perfect Parts

USA . 36,960 parts In-Stock

1+ parts

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36,960

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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15,000

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Continental Prestige Electronics

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.288

10k+ parts

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12,000

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-

$0.288

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SupplyDigital Components

Austria . 7,420 parts In-Stock

1+ parts

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7,420

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Kulean Microsystems

USA . 6,058 parts In-Stock

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6,058

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RC Electronics

USA . 5,000 parts In-Stock

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5,000

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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Metaverse IC Inc.

Canada . 4,300 parts In-Stock

1+ parts

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4,300

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Problanco Electronics

Mexico . 4,003 parts In-Stock

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4,003

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TANS Electronics

Latvia . 3,741 parts In-Stock

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3,741

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QUARKTWIN TECHNOLOGY LTD

USA . 2,810 parts In-Stock

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2,810

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A-Z Elektronik GmbH

Germany . 2,004 parts In-Stock

1+ parts

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2,004

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Futuretech Components

Singapore . 506 parts In-Stock

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506

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UHIMA Technologies

Türkiye . 409 parts In-Stock

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409

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Overview

Upgrade your electronics with the NTMFS4847NT1G by Onsemi. This high-quality N-CHANNEL FET transistor offers exceptional performance in switching applications, thanks to its built-in diode and enhancement mode operation. With a maximum drain current of 100A and a low on-resistance of 0.0062 ohm, this transistor provides superior power dissipation and reliability. Whether you're looking to optimize your circuit design or enhance your device's efficiency, the NTMFS4847NT1G delivers the value and benefits you need. Trust Onsemi for top-notch semiconductor technology that makes a difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities and low on-state resistance, ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for reverse current protection, enhancing the reliability of the transistor in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient performance.

Surface Mount: YES

Ease of installation and space-saving design for efficient PCB layout.

Minimum DS Breakdown Voltage: 30 V

Provides a safety margin for voltage spikes and variations, ensuring the transistor's reliability in high-voltage applications.

Maximum Drain Current (Abs) (ID): 85 A

High drain current rating allows for handling high current loads without overheating or damage.

Maximum Power Dissipation (Abs): 48.1 W

Efficient power handling capability, suitable for high-power applications without thermal issues.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers low on-state resistance and fast switching speeds, making it suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for harsh environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4847NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

85 A

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.0062 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS4847NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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