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MCH3474-TL-E

Onsemi

MCH3474-TL-E by Onsemi

MCH3474-TL-E by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4A ID, and 0.05 ohm RDS. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features ENHANCEMENT MODE operation in SMALL OUTLINE package suitable for surface mount assembly.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

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Digiode

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AZTECH Wire

Italy . 1,120 parts In-Stock

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Kepictronics

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,397 parts In-Stock

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SupplyDigital Components

Austria . 2,370 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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UHIMA Technologies

Türkiye . 352 parts In-Stock

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Corohmni

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Overview

Looking for a reliable small signal field-effect transistor? Look no further than the MCH3474-TL-E by Onsemi. With a reputation for high-quality products, Onsemi delivers top-notch performance in their N-channel FET with a built-in diode, perfect for switching applications. This enhancement mode transistor boasts a low on resistance of 0.05 ohm and a maximum drain current of 4A, providing exceptional value and efficiency to customers. Trust Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow, making it suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Conveniently integrates a diode within the transistor, simplifying circuit design and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and accurate response in electronic circuits.

Surface Mount: YES

Easy to mount on circuit boards, saving space and allowing for efficient layout of components.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage, allowing the transistor to withstand high voltage applications without failure.

Package Shape: RECTANGULAR

Standard rectangular shape for easy handling, placement, and integration within electronic systems.

Terminal Form: FLAT

Flat terminals provide secure connections and ease of soldering, ensuring reliable electrical connections in circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor, making it versatile for various circuit requirements.

No. of Terminals: 3

Simple 3-terminal design for easy integration and connection within electronic circuits.

Maximum Power Dissipation (Abs): 1 W

High power dissipation capability ensures the transistor can handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on circuit boards and allows for dense packing of components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability in various electronic circuit applications.

Transistor Element Material: SILICON

Silicon material provides good conductivity and performance characteristics for efficient transistor operation.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth finish ensures good solderability and corrosion resistance for reliable connections.

Maximum Drain Current (ID): 4 A

High drain current rating allows for efficient handling of current in electronic circuits without overheating or failure.

Maximum Drain-Source On Resistance: 0.05 ohm

Low on-resistance ensures minimal power loss and heat generation in the transistor, improving efficiency in circuits.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit design and allow for versatile connections in electronic systems.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3474-TL-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MCH3474-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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