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MCH3377-TL-H

Onsemi

MCH3377-TL-H by Onsemi

MCH3377-TL-H by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has 0.083 ohm max on-resistance and can handle up to 1W power dissipation at 150°C.

Median Price

$0.236

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$1.269

100+ parts

$1.155

1k+ parts

$1.041

10k+ parts

-

350

$1.269

$1.155

$1.041

-

Rochester

USA . 65,764 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

65,764

-

$0.211

$0.175

$0.156

DigiKey

USA . 65,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.260

65,764

-

-

-

$0.260

Verical

USA . 65,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.195

65,764

-

-

-

$0.195

Flip Electronics (Authorized)

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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45,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,452 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

-

10k+ parts

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1,452

$0.164

-

-

-

Vyrian

USA . 656 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

-

656

$0.173

-

-

-

Flip Electronics

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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45,000

-

-

-

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DigiKey Marketplace

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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45,000

-

-

-

-

Chip Stock

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

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16,000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 104 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

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104

$0.156

-

-

-

Corohmni

South Africa . 285 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

-

285

$0.173

-

-

-

Component Stockers USA

USA . 129,057 parts In-Stock

1+ parts

$0.180

100+ parts

$0.170

1k+ parts

$0.150

10k+ parts

$0.150

129,057

$0.180

$0.170

$0.150

$0.150

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.269

100+ parts

$1.155

1k+ parts

$1.041

10k+ parts

-

350

$1.269

$1.155

$1.041

-

Continental Prestige Electronics

USA . 65,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.159

10k+ parts

-

65,764

-

-

$0.159

-

Perfect Parts

USA . 39,154 parts In-Stock

1+ parts

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100+ parts

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39,154

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-

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RC Electronics

USA . 37,800 parts In-Stock

1+ parts

-

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

$0.080

37,800

-

$0.080

$0.080

$0.080

Kulean Microsystems

USA . 6,805 parts In-Stock

1+ parts

-

100+ parts

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6,805

-

-

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Problanco Electronics

Mexico . 3,954 parts In-Stock

1+ parts

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3,954

-

-

-

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SupplyDigital Components

Austria . 3,689 parts In-Stock

1+ parts

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3,689

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-

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Assy Fe

Spain . 2,262 parts In-Stock

1+ parts

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2,262

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Kepictronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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TANS Electronics

Latvia . 497 parts In-Stock

1+ parts

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497

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UHIMA Technologies

Türkiye . 391 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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391

-

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-

Overview

Elevate your electronic designs with the MCH3377-TL-H by Onsemi, a top-quality P-channel small signal field-effect transistor. Manufactured by Onsemi, known for their superior products, this transistor offers enhanced switching capabilities and a built-in diode for added convenience. Perfect for a variety of applications, this transistor is surface mountable and operates in enhancement mode, providing value and efficiency to your projects. Experience the benefits of reliable performance and high power dissipation with the MCH3377-TL-H - the ideal choice for your next electronics endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the transistor, ensuring durability and reliability.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistor allows for easy integration with existing circuit designs that require this specific channel type.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and reduces the need for additional components, making it convenient for use in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, making it suitable for space-constrained applications.

Minimum DS Breakdown Voltage: 20 V

20V minimum breakdown voltage ensures the transistor can handle higher voltages, increasing its versatility and reliability in various circuits.

Maximum Drain Current (Abs) (ID): 3 A

High maximum drain current rating of 3A allows for handling moderate to high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 1 W

Maximum power dissipation of 1W indicates the transistor's ability to dissipate heat effectively, ensuring stable operation under varying load conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures reliability in high-temperature environments, making it suitable for industrial applications.

Maximum Drain-Source On Resistance: 0.083 ohm

Low drain-source on resistance of 0.083 ohm minimizes power loss and improves efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3377-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.083 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MCH3377-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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