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MCH3375-TL-W

Onsemi

MCH3375-TL-W by Onsemi

MCH3375-TL-W by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 1.6A max drain current. Ideal for switching applications, it features a built-in diode, 0.295 ohm RDS(on), and operates in enhancement mode. This small outline transistor has a tin bismuth finish and is surface mountable.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 16,144 parts In-Stock

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$0.410

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Flip Electronics (Authorized)

USA . 2,615 parts In-Stock

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Chip Stock

USA . 39,330 parts In-Stock

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Flip Electronics

USA . 16,144 parts In-Stock

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Vyrian

USA . 7,843 parts In-Stock

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Digiode

USA . 112 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.154

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$1.960

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$1.766

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$2.154

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AZTECH Wire

Italy . 417 parts In-Stock

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$9.130

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Component Stockers USA

USA . 253 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Perfect Parts

USA . 24,136 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,171 parts In-Stock

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Problanco Electronics

Mexico . 5,758 parts In-Stock

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Kulean Microsystems

USA . 4,037 parts In-Stock

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TANS Electronics

Latvia . 3,837 parts In-Stock

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Kepictronics

USA . 3,375 parts In-Stock

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SupplyDigital Components

Austria . 3,014 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality MCH3375-TL-W P-channel field effect transistor by Onsemi. This small signal FET offers reliable performance and efficiency in switching applications, making it a valuable addition to any project. With Onsemi's reputation for excellence in semiconductor technology, you can trust that this transistor will deliver superior results. Take advantage of the benefits and advantages that the MCH3375-TL-W provides, from its built-in diode to its low drain-source on resistance, and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching functions in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode for voltage protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 30 V

Can withstand high voltages, making it suitable for a range of electronic devices.

Package Shape: RECTANGULAR

Standard shape for easy handling and integration into circuit designs.

Terminal Form: FLAT

Allows for secure connections during installation.

Operating Mode: ENHANCEMENT MODE

Enhances control over switching functions for improved performance.

No. of Terminals: 3

Simple design with a minimal number of terminals for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides efficient performance and reliable operation.

Transistor Element Material: SILICON

Highly common and widely used material for superior conductivity.

Terminal Finish: TIN BISMUTH

Provides corrosion resistance and ensures long-term reliability.

Maximum Drain Current (ID): 1.6 A

Capable of handling high current loads for versatile applications.

Maximum Drain-Source On Resistance: 0.295 ohm

Low resistance for efficient power transfer and reduced heat generation.

Terminal Position: DUAL

Allows for easy PCB mounting and soldering.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Optimal temperature for soldering without damaging the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3375-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.295 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MCH3375-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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