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MCH3382-TL-H

Onsemi

MCH3382-TL-H by Onsemi

MCH3382-TL-H by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage and 0.198 ohm Drain-Source Resistance. Ideal for small outline applications, it operates in Enhancement Mode with 2A Drain Current and 0.8W Power Dissipation.

Median Price

$0.412

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 2,400 parts In-Stock

1+ parts

$0.412

100+ parts

$0.153

1k+ parts

$0.107

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2,400

$0.412

$0.153

$0.107

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Chip Stock

USA . 33,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,400 parts In-Stock

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2,400

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Dan-Mar Components

USA . 2,400 parts In-Stock

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Digiode

USA . 1,566 parts In-Stock

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Vyrian

USA . 727 parts In-Stock

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727

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.609

100+ parts

$0.554

1k+ parts

$0.499

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600

$0.609

$0.554

$0.499

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Kepictronics

USA . 96,000 parts In-Stock

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Kulean Microsystems

USA . 8,341 parts In-Stock

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Problanco Electronics

Mexico . 4,038 parts In-Stock

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Perfect Parts

USA . 2,260 parts In-Stock

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TANS Electronics

Latvia . 1,600 parts In-Stock

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SupplyDigital Components

Austria . 1,219 parts In-Stock

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Corphita

USA . 1,027 parts In-Stock

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Overview

Experience the superior performance and reliability of the MCH3382-TL-H by Onsemi, a top-tier manufacturer known for their cutting-edge technology. This P-channel small signal field effect transistor offers endless possibilities in applications such as power management, audio amplification, and sensor circuits. With its built-in diode and high current capability, this enhancement mode transistor provides exceptional value and efficiency to customers seeking top-notch quality and seamless operation. Upgrade your projects with the MCH3382-TL-H and unlock a world of possibilities in electronics innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-state resistance, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for improved efficiency and protection against reverse polarity.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient.

Minimum DS Breakdown Voltage: 12 V

The high breakdown voltage allows for reliable operation in various applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate into circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer fast switching speeds and high input impedance, making them ideal for digital circuits.

Maximum Drain Current (Abs) (ID): 2 A

The high drain current rating allows for the transistor to handle a wide range of loads.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.8 W

The low power dissipation helps to improve efficiency and reduce heat generation.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space and allows for dense PCB layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs are known for their high input impedance and low noise performance.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable operation in harsh environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and durability.

Maximum Drain-Source On Resistance: 0.198 ohm

The low on-resistance helps to minimize power losses and improve efficiency.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3382-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.198 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

MCH3382-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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