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MCH3333

Onsemi

MCH3333 by Onsemi

MCH3333 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. Featuring a max ID of 1.5A and 0.28 ohm RDS(on), it operates in enhancement mode up to 150 °C. This small outline transistor with built-in diode is surface mountable, making it versatile for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 702 parts In-Stock

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Digiode

USA . 66 parts In-Stock

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SupplyDigital Components

Austria . 6,405 parts In-Stock

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TANS Electronics

Latvia . 5,349 parts In-Stock

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Problanco Electronics

Mexico . 5,322 parts In-Stock

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Corphita

USA . 2,267 parts In-Stock

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Kulean Microsystems

USA . 1,218 parts In-Stock

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UHIMA Technologies

Türkiye . 960 parts In-Stock

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Corohmni

South Africa . 180 parts In-Stock

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Overview

Enhance your electronic projects with the MCH3333 by Onsemi! This high-quality P-CHANNEL field-effect transistor offers reliable performance and versatility for a variety of switching applications. With a built-in diode and a maximum drain current of 1.5A, this transistor is perfect for power management solutions. Its small outline package and flat terminals make it easy to integrate into your designs. Trust Onsemi's expertise in semiconductor technology to deliver a product that meets your needs with precision and efficiency. Upgrade your projects today with the MCH3333!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for efficient switching applications and power management, making it a versatile choice for different electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves efficiency by eliminating the need for an external diode, making this transistor a convenient choice.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power consumption, ideal for various electronic devices.

Surface Mount: YES

Being surface mountable, this transistor is easy to install on PCBs, saving space and facilitating automated assembly processes in manufacturing.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages, providing reliability and safety in demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, allowing for efficient use of space on a circuit board or in a system.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering, enhancing the overall reliability of the transistor in various applications.

Operating Mode: ENHANCEMENT MODE

With enhancement mode operation, this transistor offers precise control over the switching process, resulting in improved performance and efficiency.

Maximum Drain Current (Abs) (ID): 1.5 A

The high maximum drain current of 1.5A allows for handling larger loads, making this transistor suitable for power applications.

No. of Terminals: 3

The 3-terminal configuration provides flexibility in circuit design and connectivity options, enabling versatile use in different electronic circuits.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9W, this transistor can handle moderate power levels, ensuring reliable operation under various operating conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on a PCB and simplifies thermal management, making it an ideal choice for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high performance and reliability, ensuring stable operation in different environments and applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for harsh operating conditions.

Transistor Element Material: SILICON

The silicon transistor element material provides excellent electrical properties, offering high efficiency and reliability in electronic circuits.

Maximum Drain-Source On Resistance: 0.28 ohm

The low drain-source on resistance of 0.28 ohm reduces power losses and improves efficiency in the transistor, making it an energy-efficient choice.

Terminal Position: DUAL

The dual terminal position allows for easy integration into different circuit layouts and ensures stable connections, enhancing the overall performance of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3333 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.28 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MCH3333 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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