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NTTS2P03R2

Onsemi

NTTS2P03R2 by Onsemi

NTTS2P03R2 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 2.1A, 0.085 ohm RDS(on), and operates in enhancement mode. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150°C.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 153,353 parts In-Stock

1+ parts

-

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$0.225

1k+ parts

$0.186

10k+ parts

$0.166

153,353

-

$0.225

$0.186

$0.166

Farnell

UK . 153,353 parts In-Stock

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$0.213

153,353

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$0.213

Verical

USA . 153,353 parts In-Stock

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$0.281

153,353

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$0.281

Distributors (In-Stock)

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Nova Conductors

Japan . 97 parts In-Stock

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$0.164

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97

$0.164

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Digiode

USA . 2,338 parts In-Stock

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$0.175

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2,338

$0.175

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Vyrian

USA . 151,852 parts In-Stock

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151,852

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Zilex Electronics Inc.

Canada . 5,000 parts In-Stock

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5,000

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Bristol Electronics

USA . 4,000 parts In-Stock

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4,000

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Diverse Electronics

Canada . 3,835 parts In-Stock

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3,835

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Semtec, LLC

USA . 48 parts In-Stock

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48

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Distributors (Availability)

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Ampacity Inc.

Singapore . 153,311 parts In-Stock

1+ parts

$0.156

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153,311

$0.156

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Corohmni

South Africa . 68 parts In-Stock

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$0.158

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68

$0.158

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Argo Parts USA

USA . 1,343 parts In-Stock

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$0.164

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$0.159

1,343

$0.164

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$0.159

Corphita

USA . 1,408 parts In-Stock

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$0.166

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$0.166

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Aztec Data Supply Inc.

USA . 151 parts In-Stock

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$0.380

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151

$0.380

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AZTECH Wire

Italy . 826 parts In-Stock

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$13.140

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826

$13.140

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Continental Prestige Electronics

USA . 169,353 parts In-Stock

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$0.169

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Kulean Microsystems

USA . 7,641 parts In-Stock

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SupplyDigital Components

Austria . 5,675 parts In-Stock

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RC Electronics

USA . 4,950 parts In-Stock

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TANS Electronics

Latvia . 2,977 parts In-Stock

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Problanco Electronics

Mexico . 786 parts In-Stock

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UHIMA Technologies

Türkiye . 637 parts In-Stock

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Kepictronics

USA . 305 parts In-Stock

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305

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Netroflash

USA . 100 parts In-Stock

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$0.161

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$0.156

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$0.153

100

-

$0.161

$0.156

$0.153

Overview

Enhance your electronic devices with the NTTS2P03R2 by Onsemi, a top-quality P-Channel Small Signal Field Effect Transistor with a built-in diode. Perfect for switching applications, this transistor offers reliable performance and efficient power management. With a maximum drain current of 2.1 A and low on-resistance of 0.085 ohm, this transistor provides excellent value and benefits to customers seeking high-quality components for their projects. Trust in Onsemi's reputable manufacturing standards and elevate your designs with the NTTS2P03R2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance and low input capacitance, making them suitable for low power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB, making this transistor an efficient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching performance.

Surface Mount: YES

Being surface-mountable makes this transistor suitable for automated assembly processes, reducing manufacturing costs and increasing overall efficiency.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures reliable operation and protection against voltage spikes in the circuit.

Package Shape: SQUARE

The square package shape allows for easy orientation and mounting on the PCB, simplifying the assembly process.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and stability, ensuring secure connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 2.1 A

With a maximum drain current of 2.1A, this transistor can handle high current loads efficiently, making it suitable for power applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit design and allows for easier connections to other components in the system.

Maximum Power Dissipation (Abs): 0.6 W

The maximum power dissipation of 0.6W ensures that the transistor can handle heat dissipation effectively, allowing for continuous operation without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs, making it ideal for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability, making this transistor suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows for operation in high-temperature environments, increasing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability, making this transistor a durable and long-lasting choice for various applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity, ensuring reliable connections in the circuit.

Maximum Drain-Source On Resistance: 0.085 ohm

With a low drain-source on resistance of 0.085 ohms, this transistor minimizes power loss and improves efficiency in the circuit.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and allows for easy integration into the system.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235°C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder joints in production.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTS2P03R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTS2P03R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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