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NTTS2P03R2G

Onsemi

NTTS2P03R2G by Onsemi

NTTS2P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology. With a max temp of 150 °C, it has a small outline package style for efficient performance.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Cyclops Electronics Ltd

UK . 6,301 parts In-Stock

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Vyrian

USA . 2,149 parts In-Stock

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Bristol Electronics

USA . 1,545 parts In-Stock

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Atlantic Semiconductor

USA . 1,545 parts In-Stock

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Digiode

USA . 342 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 166 parts In-Stock

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$9.530

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Component Stockers USA

USA . 755 parts In-Stock

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$99.990

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Perfect Parts

USA . 30,165 parts In-Stock

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Kepictronics

USA . 27,600 parts In-Stock

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Lixinc

USA . 19,568 parts In-Stock

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SupplyDigital Components

Austria . 8,313 parts In-Stock

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Problanco Electronics

Mexico . 7,879 parts In-Stock

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TANS Electronics

Latvia . 7,004 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Corphita

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UHIMA Technologies

Türkiye . 335 parts In-Stock

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Corohmni

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Overview

Discover the NTTS2P03R2G by Onsemi, a top-quality P-CHANNEL small signal FET with a built-in diode designed for switching applications. With a maximum drain current of 2.1A and low on-resistance, this transistor offers exceptional performance and reliability. Its compact package shape and surface mount design make it ideal for space-constrained projects. Trust in Onsemi's expertise and innovation to deliver superior products that meet your needs. Upgrade your electronics with the NTTS2P03R2G and experience enhanced efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making the transistor suitable for various operating environments.

Polarity or Channel Type: P-CHANNEL

P-channel FETs generally have higher transconductance and can operate at lower voltages, which can be advantageous for certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and fast performance.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, saving space and reducing production costs.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, this FET can handle higher voltages without breakdown, adding to its reliability.

Package Shape: SQUARE

Square shape can facilitate easier placement and mounting on the PCB, improving overall design efficiency.

Terminal Form: GULL WING

Gull wing terminals offer good mechanical strength and solder joint reliability, ensuring secure connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and typically have lower on-state resistance, leading to better efficiency.

Maximum Drain Current (Abs) (ID): 2.1 A

Capable of handling high drain currents, making it suitable for applications with higher power requirements.

No. of Terminals: 8

Having 8 terminals allows for more connectivity options and flexibility in circuit design.

Maximum Power Dissipation (Abs): 1.78 W

With a high power dissipation capability, this FET can handle heat efficiently, ensuring reliable operation under various conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, enabling compact and densely populated designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low input capacitance, ideal for switching applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, ensuring reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon-based FETs are known for their reliability and performance, making this transistor a dependable choice.

Terminal Finish: TIN

Tin coating on terminals provides good conductivity and solderability, ensuring secure connections.

Maximum Drain-Source On Resistance: 0.085 ohm

Low on-resistance helps in reducing power losses and improving efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position provides more flexibility in circuit layout and connection possibilities.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30s, the FET can withstand high-temperature soldering processes during manufacturing.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures, ensuring reliable solder joints during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTS2P03R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTS2P03R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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