Loading...

NTQS6463R2

Onsemi

NTQS6463R2 by Onsemi

NTQS6463R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 6.2A, 0.02 ohm RDS(on), and operates in ENHANCEMENT MODE. This RECTANGULAR package has GULL WING terminals and can withstand up to 150 °C operating temperature.

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,050 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

5,050

-

$0.502

$0.417

$0.371

DigiKey

USA . 5,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

5,050

-

-

$0.630

-

Verical

USA . 2,629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.521

10k+ parts

$0.464

2,629

-

-

$0.521

$0.464

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,675 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

10k+ parts

-

1,675

$0.391

-

-

-

Chip Stock

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,000

-

-

-

-

Vyrian

USA . 9,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,291

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,117 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

-

2,117

$0.371

-

-

-

Corohmni

South Africa . 339 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

-

339

$0.412

-

-

-

AZTECH Wire

Italy . 427 parts In-Stock

1+ parts

$16.330

100+ parts

-

1k+ parts

-

10k+ parts

-

427

$16.330

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

TANS Electronics

Latvia . 8,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,317

-

-

-

-

SupplyDigital Components

Austria . 5,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,568

-

-

-

-

Continental Prestige Electronics

USA . 5,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.378

10k+ parts

-

5,050

-

-

$0.378

-

Kulean Microsystems

USA . 538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

538

-

-

-

-

Infinite Electronics LLP (Excess)

. 509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

509

-

-

-

-

Problanco Electronics

Mexico . 439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

439

-

-

-

-

UHIMA Technologies

Türkiye . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

Overview

Unleash the power of high-quality Small Signal Field Effect Transistors with the NTQS6463R2 by Onsemi. Designed for switching applications, this P-Channel transistor offers a single configuration with a built-in diode, ensuring seamless performance. With a maximum drain current of 6.2A and low on-resistance, this transistor provides efficient power management in a compact package. Trust Onsemi's cutting-edge technology and reliability to meet your electronic needs. Upgrade your devices with the NTQS6463R2 and experience enhanced productivity and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are suitable for low power applications and can provide effective switching capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency in certain applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Surface Mount: YES

Surface mount design allows for easy integration onto circuit boards, saving space and improving overall design aesthetics.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltage applications with ease.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control over the transistor's conductance, enabling precise switching capabilities.

Maximum Drain Current (Abs): 6.2 A

High maximum drain current allows for handling of heavy loads and high-power applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit connections and allows for more complex circuit designs.

Maximum Power Dissipation (Abs): 0.67 W

With a maximum power dissipation of 0.67W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures stable performance even in environments with elevated temperatures.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a dependable choice.

Maximum Drain-Source On Resistance: 0.02 ohm

Low drain-source on resistance ensures efficient power transfer and minimal power loss during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTQS6463R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

6.2 A

Maximum Drain Current (ID):

5.5 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTQS6463R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1