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NTMD4184PFR2G

Onsemi

NTMD4184PFR2G by Onsemi

NTMD4184PFR2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 4A Drain Current, 0.095 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.31W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in a small outline package.

Median Price

$0.371

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 95,000 parts In-Stock

1+ parts

-

100+ parts

$0.371

1k+ parts

$0.308

10k+ parts

$0.275

95,000

-

$0.371

$0.308

$0.275

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 10,000 parts In-Stock

1+ parts

$0.210

100+ parts

-

1k+ parts

-

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10,000

$0.210

-

-

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Digiode

USA . 2,133 parts In-Stock

1+ parts

$0.303

100+ parts

-

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2,133

$0.303

-

-

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Maritex

Poland . 2,387 parts In-Stock

1+ parts

$3.641

100+ parts

$2.197

1k+ parts

$1.855

10k+ parts

-

2,387

$3.641

$2.197

$1.855

-

Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Vyrian

USA . 5,745 parts In-Stock

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5,745

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Cyclops Electronics Ltd

UK . 802 parts In-Stock

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802

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Distributors (Availability)

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Corphita

USA . 381 parts In-Stock

1+ parts

$0.287

100+ parts

-

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381

$0.287

-

-

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Corohmni

South Africa . 71 parts In-Stock

1+ parts

$0.319

100+ parts

-

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71

$0.319

-

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Component Stockers USA

USA . 203,816 parts In-Stock

1+ parts

$0.330

100+ parts

$0.310

1k+ parts

$0.280

10k+ parts

$0.280

203,816

$0.330

$0.310

$0.280

$0.280

Continental Prestige Electronics

USA . 205 parts In-Stock

1+ parts

$0.857

100+ parts

$0.504

1k+ parts

-

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205

$0.857

$0.504

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-

AZTECH Wire

Italy . 93 parts In-Stock

1+ parts

$14.050

100+ parts

-

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93

$14.050

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Perfect Parts

USA . 30,519 parts In-Stock

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30,519

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Assy Fe

Spain . 25,250 parts In-Stock

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Kepictronics

USA . 22,500 parts In-Stock

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22,500

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SupplyDigital Components

Austria . 7,451 parts In-Stock

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7,451

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Kulean Microsystems

USA . 5,596 parts In-Stock

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5,596

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TANS Electronics

Latvia . 5,523 parts In-Stock

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Lixinc

USA . 3,504 parts In-Stock

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3,504

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,912 parts In-Stock

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2,912

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A-Z Elektronik GmbH

Germany . 2,220 parts In-Stock

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Microchip USA

USA . 192 parts In-Stock

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192

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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6

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Overview

Enhance your electronic devices with the NTMD4184PFR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that provide reliable performance in a variety of applications. Whether you need switching capabilities or enhanced power management, this P-Channel transistor with a built-in diode offers exceptional value and benefits. Trust Onsemi to deliver cutting-edge technology that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode, making it convenient for certain circuit designs.

Transistor Application: SWITCHING

Ideal for switching applications due to its design and characteristics.

Surface Mount: YES

Can be easily mounted on a circuit board for compact and efficient designs.

Minimum DS Breakdown Voltage: 30 V

Withstands high voltage levels, adding to the reliability of the transistor.

Package Shape: RECTANGULAR

Allows for easy placement and mounting in a circuit.

Terminal Form: GULL WING

Facilitates easy soldering and connection in the circuit.

Operating Mode: ENHANCEMENT MODE

Provides better control and efficiency during operation.

Maximum Drain Current (Abs) (ID): 4 A

Can handle higher current loads, suitable for various applications.

No. of Terminals: 8

Offers multiple connection points for versatile use in circuits.

Maximum Power Dissipation (Abs): 2.31 W

Can dissipate power efficiently to prevent overheating.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the circuit board.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Uses MOSFET technology for efficient switching and control.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon material offers reliability and performance in electronic devices.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and contact durability.

Maximum Drain Current (ID): 2.3 A

Able to handle moderate current loads for various applications.

Maximum Drain-Source On Resistance: 0.095 ohm

Low on-resistance ensures efficient power transfer and minimal heat generation.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering processes for a sufficient duration.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering without damage.

Maximum Feedback Capacitance (Crss): 80 pF

Low feedback capacitance contributes to stable and efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMD4184PFR2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

2.3 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

80 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMD4184PFR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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