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NTMD6P02R2G

Onsemi

NTMD6P02R2G by Onsemi

NTMD6P02R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max Drain Current of 4.8A and Drain-Source On Resistance of 0.033 ohm at 150°C.

Median Price

$0.638

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 70,000 parts In-Stock

1+ parts

$0.530

100+ parts

$0.520

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$0.510

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70,000

$0.530

$0.520

$0.510

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Arrow

USA . 5,000 parts In-Stock

1+ parts

$1.208

100+ parts

$0.694

1k+ parts

$0.528

10k+ parts

$0.438

5,000

$1.208

$0.694

$0.528

$0.438

Verical

USA . 1,347 parts In-Stock

1+ parts

-

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$0.745

1k+ parts

$0.557

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$0.471

1,347

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$0.745

$0.557

$0.471

Chip1Stop

Japan . 1,347 parts In-Stock

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-

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$0.513

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$0.424

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$0.416

1,347

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$0.513

$0.424

$0.416

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.557

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300

$0.557

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Digiode

USA . 1,648 parts In-Stock

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$1.188

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 16,485 parts In-Stock

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Vyrian

USA . 6,797 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,000 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.991

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Sensible Micro Corp

USA . 1,704 parts In-Stock

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ComSIT Distribution GmbH

Germany . 800 parts In-Stock

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800

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Lantek

USA . 336 parts In-Stock

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336

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Bristol Electronics

USA . 190 parts In-Stock

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$0.422

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190

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$0.422

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QIE Inc.

USA . 92 parts In-Stock

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Ampacity Inc.

Singapore . 6,287 parts In-Stock

1+ parts

$0.360

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6,287

$0.360

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Corohmni

South Africa . 320 parts In-Stock

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$0.425

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320

$0.425

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Continental Prestige Electronics

USA . 2,788 parts In-Stock

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$0.557

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$0.545

2,788

$0.557

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$0.545

Argo Parts USA

USA . 1,545 parts In-Stock

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$0.557

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$0.540

1,545

$0.557

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$0.540

Netroflash

USA . 500 parts In-Stock

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$0.557

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500

$0.557

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Corphita

USA . 1,849 parts In-Stock

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$1.125

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$1.125

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Aztec Data Supply Inc.

USA . 172 parts In-Stock

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$1.242

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Microchip USA

USA . 9,775 parts In-Stock

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$3.376

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 8,000 parts In-Stock

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Assy Fe

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Kepictronics

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A-Z Elektronik GmbH

Germany . 6,266 parts In-Stock

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Problanco Electronics

Mexico . 5,086 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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Futuretech Components

Singapore . 507 parts In-Stock

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Israel . 336 parts In-Stock

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TANS Electronics

Latvia . 242 parts In-Stock

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SupplyDigital Components

Austria . 84 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the NTMD6P02R2G by Onsemi. Crafted with precision and expertise, this P-CHANNEL Small Signal Field Effect Transistor offers unparalleled performance and reliability in switching applications. With a maximum drain current of 4.8A and a low on-resistance of 0.033 ohm, this transistor ensures seamless operation and optimal efficiency. Trust Onsemi's reputation for excellence and elevate your designs with the NTMD6P02R2G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it ideal for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low power consumption and high efficiency, making this transistor a good choice for applications where power efficiency is key.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode enhances the functionality of the transistor, allowing for more versatile usage in circuits.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB, making this transistor a practical choice for compact designs.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape of the package adds to the ease of mounting and integration into circuit designs.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability and ensures reliable connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved performance and efficiency, making this transistor a reliable choice for demanding applications.

No. of Elements: 2

With two elements in the package, this transistor offers versatility and flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 4.8 A

The high maximum drain current allows for handling higher current loads, making this transistor suitable for power applications.

No. of Terminals: 8

The eight terminals provide ample connectivity options, allowing for more complex circuit configurations.

Maximum Power Dissipation (Abs): 0.75 W

With a maximum power dissipation of 0.75W, this transistor can handle moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high performance and efficiency, making this transistor a reliable choice for demanding applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures in harsh environments.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability, making this transistor a durable choice for long-term use.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures reliable connections in the circuit.

Maximum Drain Current (ID): 4.8 A

The high maximum drain current rating enables this transistor to handle higher current loads with ease.

Maximum Drain-Source On Resistance: 0.033 ohm

The low drain-source on resistance ensures efficient power handling and minimal power loss in the circuit.

Terminal Position: DUAL

The dual terminal position allows for easy installation and flexibility in circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and reliability in assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can undergo high-temperature soldering processes without damage.

Maximum Feedback Capacitance (Crss): 450 pF

The low feedback capacitance ensures stable performance and high-frequency response, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMD6P02R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.8 A

Maximum Drain Current (ID):

4.8 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

450 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMD6P02R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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