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NTMD4840NR2G

Onsemi

NTMD4840NR2G by Onsemi

NTMD4840NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.5A Drain Current, and 0.024 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features GULL WING terminals in a SMALL OUTLINE package style for surface mount assembly.

Median Price

$0.293

Lifecycle Status

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12

In-Stock Inventory

1k+

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Chip1Stop

Japan . 2,490 parts In-Stock

1+ parts

$2.670

100+ parts

$0.750

1k+ parts

$0.505

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-

2,490

$2.670

$0.750

$0.505

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Rochester

USA . 318,954 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.253

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$0.225

318,954

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$0.304

$0.253

$0.225

DigiKey

USA . 272,102 parts In-Stock

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$0.260

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Verical

USA . 225,702 parts In-Stock

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$0.282

225,702

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$0.282

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EXC GmbH

Germany . 500 parts In-Stock

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$0.218

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$0.218

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Digiode

USA . 1,304 parts In-Stock

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$0.238

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1,304

$0.238

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Vyrian

USA . 208 parts In-Stock

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$0.250

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$0.250

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Component Sense

UK . 143,567 parts In-Stock

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Prism Electronics

USA . 12,612 parts In-Stock

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Rebound Electronics

UK . 2,020 parts In-Stock

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Bristol Electronics

USA . 1,589 parts In-Stock

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$0.487

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$0.210

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1,589

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$0.487

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Dan-Mar Components

USA . 1,589 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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$0.218

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364

$0.218

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Corphita

USA . 1,174 parts In-Stock

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$0.225

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1,174

$0.225

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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$1.661

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$1.661

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$1.661

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500

$1.661

$1.661

$1.661

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Continental Prestige Electronics

USA . 234,602 parts In-Stock

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$0.550

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Perfect Parts

USA . 116,405 parts In-Stock

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iBuyXS LLC

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Infinite Electronics LLP (Excess)

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 3,299 parts In-Stock

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SupplyDigital Components

Austria . 2,908 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Kulean Microsystems

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Assy Fe

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Futuretech Components

Singapore . 507 parts In-Stock

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Lixinc

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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TANS Electronics

Latvia . 247 parts In-Stock

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Overview

Enhance your electronic projects with the NTMD4840NR2G by Onsemi, a top-quality N-CHANNEL Small Signal Field Effect Transistor. Manufactured by Onsemi, this FET offers reliable performance and durability for your switching applications. With a separate, 2-element configuration and built-in diode, this transistor provides enhanced efficiency and versatility. Its small outline package design makes it easy to integrate into your projects, while its maximum drain current of 4.5A ensures consistent operation. Trust Onsemi for cutting-edge technology and superior quality in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel type transistors typically have better performance characteristics compared to P-channel transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides additional functionality for certain applications.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Surface mount technology allows for easy integration into circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages safely.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting of the transistor on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control and performance of the transistor in various applications.

No. of Elements: 2

Having 2 elements allows for more complex circuit designs and increased functionality.

Maximum Drain Current (Abs) (ID): 7.5 A

High maximum drain current rating provides flexibility for a wide range of applications.

No. of Terminals: 8

With 8 terminals, this transistor allows for multiple connections and greater circuit design options.

Maximum Power Dissipation (Abs): 1.95 W

High maximum power dissipation rating ensures the transistor can handle heat dissipation effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability for the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring good performance and durability.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for secure connections.

Maximum Drain-Source On Resistance: 0.024 ohm

Low drain-source on resistance ensures efficient power delivery and minimal heat dissipation.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperature for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper solder melting and bonding during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMD4840NR2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.5 A

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMD4840NR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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