Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.
Median Price
-
Lifecycle Status
Suppliers In-Stock
2
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
AZTECH Wire
$8.890
Component Stockers USA
$99.990
Kepictronics
Problanco Electronics
Kulean Microsystems
TANS Electronics
SupplyDigital Components
Corphita
Corohmni
UHIMA Technologies
Plastic/Epoxy material provides good insulation and protection for the components inside, ensuring durability and reliability.
Having both N-channel and P-channel options allows for versatile use in various circuit designs.
The built-in diode and resistor simplify circuit design and save space on the PCB.
Designed specifically for switching applications, ensuring fast and efficient performance.
Surface mount capability enables easy integration onto circuit boards for compact designs.
With a minimum breakdown voltage of 20V, this FET can handle medium to high voltage applications.
Capable of handling a maximum drain current of 0.54A, suitable for various low to medium power applications.
With a maximum power dissipation of 0.28W, this FET can operate efficiently without overheating.
Can operate in high-temperature environments up to 150 °C, suitable for industrial applications.
Low on-resistance ensures minimal power loss and efficient performance in switching applications.
Small Signal Field Effect Transistors (FET) NTZD3156CT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTZD3156CT5G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Multiple Devices 07/Jul/2010
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TCA6424ARGJR
Texas Instruments
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Semitronics
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
Diotec Electronics
BAV99
Plessey Semiconductors Discrete Components Div
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F407VGT6
STMicroelectronics
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
Taiwan Semiconductor
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
CRGCQ0805F10K
TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
2N2222A
Gec Plessey Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NTJD5121NT1G
Onsemi
NTJD5121NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.295A max drain current, and 1.6 ohm max on resistance. Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C.
FDC6333C
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: .095 ohm; JESD-609 Code: e3;
SI2319DS-T1-GE3
SI2319DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The transistor features a built-in DIODE, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package style.
LND150N3-GP003
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE; Operating Mode: DEPLETION MODE;
MMBF170LT1
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
ZXMP4A16GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel;
IRLML2803GTRPBF
Infineon's IRLML2803GTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.2A Drain Current, 0.25 ohm On Resistance, and 150°C Operating Temperature. Its GULL WING terminals and ENHANCEMENT MODE make it suitable for compact electronic devices requiring efficient power management.
BSS138PW
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PDSO-G3;
BSS84LT1G
BSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.225W.
2N7002DW
Transys Electronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
FDN357N
FDN357N by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 1.9A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.06 ohm. The small outline package with gull wing terminals makes it suitable for surface mount designs at temperatures up to 150°C.
IRF9310TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
NDS7002A_NL
Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.
FDV305N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
DN3135K1-G
Microchip Technology
DN3135K1-G by Microchip Technology is a N-CHANNEL FET for SWITCHING applications. It has a 350V DS Breakdown Voltage, 0.36W Power Dissipation, and -55 to 150°C Operating Temperature range. The package is RECTANGULAR with GULL WING terminals in SMALL OUTLINE style.
MMBF170
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
326
Nte Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION;
FDN335N
FDN335N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.7A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. This SMALL OUTLINE transistor has GULL WING terminals and matte tin finish for surface mount assembly.
BSS123
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
IRF7820TRPBF
IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTZD3154NT1G
NTZD3154NT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It has a max drain current of 0.54A, on-resistance of 0.55 ohm, and breakdown voltage of 20V. With a small outline package style and operating temperature up to 150°C, it offers efficient performance in various electronic circuits.
NTZD5110NT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
NTZD3155CT1G
NTZD3155CT1G by Onsemi is a small signal FET with N-CHANNEL and P-CHANNEL polarity. It has a min DS breakdown voltage of 20V and max drain current of 0.54A. This transistor is commonly used for switching applications.
NTZD3152PT1G
NTZD3152PT1G by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.43A and a max power dissipation of 0.28W.
NTZD3155CT2G
NTZD3155CT2G by Onsemi is a Small Signal FET with N/P-Channel types. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.54A, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices.
NTZD3154NT5G
NTZD3154NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.54A, on-resistance of 0.55 ohm, and breakdown voltage of 20V. With a small outline package style and operating temperature up to 150°C, it's suitable for various electronic designs.
NTZD3156CT1G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; No. of Elements: 2; Moisture Sensitivity Level (MSL): 1;
NTZD3156CT2G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
NTZD3152PT1H
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; No. of Terminals: 6; Peak Reflow Temperature (C): 260;
NTZD3154NT5H
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: .55 ohm; Peak Reflow Temperature (C): 260;
NTZD5110NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTZD3155CT5H
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Shape: RECTANGULAR; No. of Elements: 2;
NTZD3154NT2H
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
NTZD3152PT5H
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ESD PROTECTION, LOW THRESHOLD; Maximum Drain Current (ID): .43 A; No. of Elements: 2;
NTZD3154NT1H
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: FLAT; Package Shape: RECTANGULAR;
NTZD3155CT1H
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
NTZD3155CT2H
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Terminal Form: FLAT;
NTZD3152PT5G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
NTZD3154NT2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Element Material: SILICON; Terminal Position: DUAL;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved