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J112G

Onsemi

J112G by Onsemi

J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 843 parts In-Stock

1+ parts

-

100+ parts

$0.330

1k+ parts

$0.274

10k+ parts

$0.244

843

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$0.330

$0.274

$0.244

Distributors (In-Stock)

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Digiode

USA . 1,497 parts In-Stock

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$0.257

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1,497

$0.257

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Vyrian

USA . 2,214 parts In-Stock

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2,214

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ComSIT Distribution GmbH

Germany . 1,850 parts In-Stock

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1,850

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Sunrise Surplus Inc.

USA . 75 parts In-Stock

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75

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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70

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MRC Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Corphita

USA . 659 parts In-Stock

1+ parts

$0.244

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659

$0.244

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Corohmni

South Africa . 492 parts In-Stock

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$0.271

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492

$0.271

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AZTECH Wire

Italy . 1,034 parts In-Stock

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$19.440

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1,034

$19.440

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Perfect Parts

USA . 11,749 parts In-Stock

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TANS Electronics

Latvia . 8,167 parts In-Stock

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Problanco Electronics

Mexico . 5,255 parts In-Stock

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Kulean Microsystems

USA . 5,008 parts In-Stock

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SupplyDigital Components

Austria . 2,919 parts In-Stock

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2,919

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UHIMA Technologies

Türkiye . 814 parts In-Stock

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Overview

Discover the impeccable quality and reliable performance of the J112G by Onsemi, a leading manufacturer in the industry. This small signal Field Effect Transistor (FET) offers unparalleled precision and efficiency in a variety of applications, making it a versatile choice for your projects. With its N-channel polarity and single configuration, this transistor is designed to excel in chopper applications. Experience the value and benefits of using the J112G, from its maximum power dissipation of 0.4W to its junction field effect transistor technology. Trust Onsemi's commitment to excellence and innovation with the J112G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Provides efficient conduction of current in the desired direction.

Configuration: SINGLE

Simplified design for easy integration and use in circuits.

Transistor Application: CHOPPER

Specifically designed for chopper applications, ensuring optimal performance.

Package Shape: ROUND

Compact and space-saving design for versatile installation options.

Terminal Form: THROUGH-HOLE

Ease of use and secure connections for reliable performance in circuits.

Operating Mode: DEPLETION MODE

Allows for precise control and management of current flow.

No. of Terminals: 3

Simplified interface for easy integration with other components.

Maximum Power Dissipation: 0.4 W

Efficient power handling capability for reliable operation.

Package Style (Meter): CYLINDRICAL

Compact and streamlined design for easy installation and space-saving.

Field Effect Transistor Technology: JUNCTION

High-quality technology for improved performance and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a range of environments.

Transistor Element Material: SILICON

Highly reliable and durable material for long-lasting performance.

Terminal Finish: TIN SILVER COPPER

Enhanced conductivity and durability for efficient connections.

Maximum Drain-Source On Resistance: 50 ohm

Low resistance for efficient current flow and performance.

Terminal Position: BOTTOM

Convenient terminal positioning for easy installation and connectivity.

Peak Reflow Temperature °C: 260

High temperature threshold for reliable soldering and reflow processes.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance for improved stability and performance in circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J112G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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