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J112-D74Z

Onsemi

J112-D74Z by Onsemi

J112-D74Z by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.4W and Max Operating Temperature of 150 °C. Ideal for SWITCHING applications due to its low Drain-Source On Resistance of 50 ohm and small feedback Capacitance of 5pF.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,514 parts In-Stock

1+ parts

$0.114

100+ parts

$0.107

1k+ parts

$0.097

10k+ parts

-

3,514

$0.114

$0.107

$0.097

-

Mouser Electronics

USA . 1,884 parts In-Stock

1+ parts

$0.600

100+ parts

$0.236

1k+ parts

$0.160

10k+ parts

$0.143

1,884

$0.600

$0.236

$0.160

$0.143

DigiKey

USA . 3,342 parts In-Stock

1+ parts

$0.640

100+ parts

$0.252

1k+ parts

$0.170

10k+ parts

$0.130

3,342

$0.640

$0.252

$0.170

$0.130

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,073 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

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2,073

$0.108

-

-

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Vyrian

USA . 1,517 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

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1,517

$0.114

-

-

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Flip Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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36,000

-

-

-

-

Chip Stock

USA . 7,511 parts In-Stock

1+ parts

-

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-

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7,511

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-

-

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Anansix

USA . 1,092 parts In-Stock

1+ parts

-

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1,092

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NexGen Digital

USA . 10 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,159 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

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2,159

$0.103

-

-

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Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.114

100+ parts

-

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264

$0.114

-

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iodParts Technologies Inc.

India . 44,000 parts In-Stock

1+ parts

-

100+ parts

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44,000

-

-

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ChipstoGo Electronic ltd

UK . 40,000 parts In-Stock

1+ parts

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40,000

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QUARKTWIN TECHNOLOGY LTD

USA . 11,751 parts In-Stock

1+ parts

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11,751

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SupplyDigital Components

Austria . 7,343 parts In-Stock

1+ parts

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7,343

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Kepictronics

USA . 6,000 parts In-Stock

1+ parts

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6,000

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TANS Electronics

Latvia . 5,866 parts In-Stock

1+ parts

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5,866

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Lixinc

USA . 5,410 parts In-Stock

1+ parts

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5,410

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-

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Problanco Electronics

Mexico . 5,236 parts In-Stock

1+ parts

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5,236

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-

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Supply Digital

USA . 2,301 parts In-Stock

1+ parts

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2,301

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Kulean Microsystems

USA . 1,576 parts In-Stock

1+ parts

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100+ parts

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1,576

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UHIMA Technologies

Türkiye . 168 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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168

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Overview

Unlock the power of precision with the J112-D74Z by Onsemi. Crafted with expertise and precision, this high-quality Small Signal Field Effect Transistor is designed to elevate your projects to new heights. Perfect for switching applications, the N-CHANNEL transistor offers seamless performance in a compact package. Experience the unparalleled value and reliability that Onsemi brings to every product, and discover the endless possibilities this transistor brings to your creations. Elevate your designs with the J112-D74Z and unleash your creativity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, extending its lifespan and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in one direction, suitable for many electronic applications.

Configuration: SINGLE

Simplified design and ease of use for circuit integration.

Transistor Application: SWITCHING

Optimized for fast switching speeds, ideal for applications where rapid on/off switching is required.

Package Shape: ROUND

Compact design that can fit into tight spaces efficiently.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting on circuit boards.

Operating Mode: DEPLETION MODE

Provides flexibility in circuit design and functionality.

Maximum Power Dissipation (Abs): 0.4 W

Suitable for applications that require low power consumption.

Package Style (Meter): CYLINDRICAL

Offers a robust and compact form factor for various applications.

Field Effect Transistor Technology: JUNCTION

Ensures reliable performance and longevity of the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides good performance and efficiency for the transistor.

Terminal Finish: MATTE TIN

Enhances solderability and durability of terminal connections.

Maximum Drain-Source On Resistance: 50 ohm

Low on-resistance for efficient current flow and minimal heat dissipation.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on circuit boards.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance for improved high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112-D74Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J112-D74Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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