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J112-D27Z

Onsemi

J112-D27Z by Onsemi

J112-D27Z by Onsemi is a N-CHANNEL FET for SWITCHING applications. It has a Max Power Dissipation of 0.4W and Max Operating Temperature of 150°C. With a Max Drain-Source On Resistance of 50 ohm, it is ideal for DEPLETION MODE operation in various electronic circuits.

Median Price

$0.231

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,261 parts In-Stock

1+ parts

$0.600

100+ parts

$0.236

1k+ parts

$0.160

10k+ parts

$0.112

3,261

$0.600

$0.236

$0.160

$0.112

DigiKey

USA . 19,774 parts In-Stock

1+ parts

$0.640

100+ parts

$0.252

1k+ parts

$0.170

10k+ parts

$0.130

19,774

$0.640

$0.252

$0.170

$0.130

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.231

10k+ parts

$0.128

12,000

-

-

$0.231

$0.128

Master Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.197

10k+ parts

$0.109

12,000

-

-

$0.197

$0.109

Rochester

USA . 12 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

12

-

$0.132

$0.110

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,421 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

-

2,421

$0.103

-

-

-

Vyrian

USA . 1,459 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

-

1,459

$0.108

-

-

-

Flip Electronics

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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38,000

-

-

-

-

IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.276

10k+ parts

$0.153

12,000

-

-

$0.276

$0.153

NexGen Digital

USA . 2,643 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,643

-

-

-

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Anansix

USA . 2,425 parts In-Stock

1+ parts

-

100+ parts

-

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2,425

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-

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Nova Conductors

Japan . 265 parts In-Stock

1+ parts

-

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-

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265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 18,142 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

18,142

$0.092

-

-

-

Corphita

USA . 3,060 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

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3,060

$0.097

-

-

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Corohmni

South Africa . 366 parts In-Stock

1+ parts

$0.108

100+ parts

-

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-

10k+ parts

-

366

$0.108

-

-

-

Component Stockers USA

USA . 757 parts In-Stock

1+ parts

$0.370

100+ parts

$0.160

1k+ parts

-

10k+ parts

-

757

$0.370

$0.160

-

-

iodParts Technologies Inc.

India . 29,144 parts In-Stock

1+ parts

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29,144

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-

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Problanco Electronics

Mexico . 8,089 parts In-Stock

1+ parts

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8,089

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-

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Kepictronics

USA . 6,000 parts In-Stock

1+ parts

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6,000

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-

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SupplyDigital Components

Austria . 4,404 parts In-Stock

1+ parts

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4,404

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-

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TANS Electronics

Latvia . 2,961 parts In-Stock

1+ parts

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2,961

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Netroflash

USA . 2,200 parts In-Stock

1+ parts

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2,200

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Supply Digital

USA . 1,818 parts In-Stock

1+ parts

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1,818

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Kulean Microsystems

USA . 1,029 parts In-Stock

1+ parts

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100+ parts

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1,029

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-

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UHIMA Technologies

Türkiye . 450 parts In-Stock

1+ parts

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450

-

-

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-

Overview

Enhance your electronic projects with the J112-D27Z by Onsemi. Crafted with precision and expertise, this Small Signal Field Effect Transistor (FET) delivers top-notch performance in switching applications. With a single configuration and N-channel design, this transistor offers seamless operation in depletion mode. Its durable plastic/epoxy body ensures long-lasting reliability while its low power dissipation and high drain-source on resistance provide efficiency and effectiveness. Elevate your projects with the quality and value of the J112-D27Z.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components of the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and lower on-resistance compared to P-channel transistors, making them suitable for high-performance applications.

Configuration: SINGLE

Single configuration simplifies the design and layout of circuits, making it easier to integrate this transistor into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels without overheating, ensuring stable operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in a wide range of environments, including industrial and automotive applications.

Maximum Drain-Source On Resistance: 50 ohm

A low on-resistance of 50 ohms helps minimize power loss and heat generation in the transistor, improving overall efficiency.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance of 5pF reduces the risk of parasitic oscillations in high-frequency circuits, maintaining signal integrity and stability.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112-D27Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J112-D27Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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