Loading...

NTZS3151PT5G

Onsemi

NTZS3151PT5G by Onsemi

NTZS3151PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.86A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, this MOSFET has 0.15 ohm Drain-Source On Resistance for efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,343

-

-

-

-

Digiode

USA . 515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

515

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 493 parts In-Stock

1+ parts

$14.230

100+ parts

-

1k+ parts

-

10k+ parts

-

493

$14.230

-

-

-

TANS Electronics

Latvia . 7,229 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,229

-

-

-

-

Problanco Electronics

Mexico . 7,035 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,035

-

-

-

-

SupplyDigital Components

Austria . 3,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,167

-

-

-

-

Kulean Microsystems

USA . 817 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

817

-

-

-

-

UHIMA Technologies

Türkiye . 589 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

589

-

-

-

-

Perfect Parts

USA . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

314

-

-

-

-

Corphita

USA . 224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

224

-

-

-

-

Corohmni

South Africa . 116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

116

-

-

-

-

Overview

Enhance your electronic devices with the NTZS3151PT5G by Onsemi, a top-quality Small Signal Field Effect Transistor that offers unparalleled performance and reliability. Designed with precision by Onsemi, a trusted manufacturer in the industry, this P-CHANNEL transistor is perfect for switching applications. With a built-in diode and low on-resistance, this transistor provides exceptional value and efficiency to customers. Upgrade your circuits today with the NTZS3151PT5G and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower leakage currents and higher mobility, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this transistor more efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and fast switching speeds.

Surface Mount: YES

Being surface mountable, this transistor can be easily integrated onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, providing added protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering onto circuit boards, optimizing space usage.

No. of Terminals: 6

The 6 terminals provide ample connections for various circuit configurations, making this transistor versatile for different applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low power consumption and fast switching speeds, making this transistor energy efficient and reliable.

Maximum Drain Current (ID): 0.86 A

With a maximum drain current of 0.86A, this transistor can handle higher currents, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 0.15 ohm

The low drain-source on resistance of 0.15 ohms minimizes power loss and heat generation, increasing the efficiency of this transistor.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections for optimal performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds at peak temperature, this transistor is easy to solder onto circuit boards, reducing assembly time.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures a secure and durable solder joint, making this transistor suitable for high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTZS3151PT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.86 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTZS3151PT5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2