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NTZS3151PT1G

Onsemi

NTZS3151PT1G by Onsemi

NTZS3151PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.86A Drain Current, and 0.15 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor features METAL-OXIDE SEMICONDUCTOR tech and matte tin finish on its 6 terminals.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3,960 parts In-Stock

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$0.059

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$0.059

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Newark

USA . 2,904 parts In-Stock

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$0.402

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$0.156

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$0.115

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$0.402

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Mouser Electronics

USA . 6,848 parts In-Stock

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$0.420

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$0.162

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$0.108

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6,848

$0.420

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Rochester

USA . 280,360 parts In-Stock

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$0.073

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$0.061

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$0.054

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$0.073

$0.061

$0.054

Verical

USA . 248,000 parts In-Stock

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$0.068

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Avnet

USA . 96,000 parts In-Stock

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DigiKey

USA . 18,260 parts In-Stock

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$0.073

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Element14

Singapore . 4,200 parts In-Stock

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$12.980

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$12.730

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$12.980

$12.730

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Chip1Stop

Japan . 4,000 parts In-Stock

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$0.075

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$0.074

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$0.075

$0.074

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Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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Farnell

UK . 3,245 parts In-Stock

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$0.253

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$0.089

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$0.088

3,245

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$0.253

$0.089

$0.088

Distributors (In-Stock)

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Digiode

USA . 372 parts In-Stock

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$0.082

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372

$0.082

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Maritex

Poland . 254,406 parts In-Stock

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$0.278

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$0.076

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$0.064

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$0.057

254,406

$0.278

$0.076

$0.064

$0.057

Vyrian

USA . 91,998 parts In-Stock

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Chip Stock

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Flip Electronics

USA . 28,000 parts In-Stock

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NAC Semi

USA . 8,000 parts In-Stock

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$0.258

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IBS Electronics

USA . 8,000 parts In-Stock

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$0.180

8,000

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$0.180

Cyclops Electronics Ltd

UK . 5,792 parts In-Stock

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Bristol Electronics

USA . 4,000 parts In-Stock

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Sea View Technologies

USA . 3,033 parts In-Stock

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Connector Distribution Corp

USA . 250 parts In-Stock

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Right Parts Inc.

USA . 250 parts In-Stock

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Ashlea Components Ltd

UK . 148 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 89,029 parts In-Stock

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$0.061

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Corohmni

South Africa . 374 parts In-Stock

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$0.072

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Corphita

USA . 788 parts In-Stock

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788

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Semicontronic

India . 88,174 parts In-Stock

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$0.133

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$0.130

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$0.129

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Aztec Data Supply Inc.

USA . 267 parts In-Stock

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$1.150

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267

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.349

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$1.282

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$1.282

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$1.349

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$1.282

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Kepictronics

USA . 71,000 parts In-Stock

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S.R.D Solutions

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GreenTree Electronics

Israel . 37,578 parts In-Stock

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Lixinc

USA . 16,371 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 6,198 parts In-Stock

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Kulean Microsystems

USA . 5,514 parts In-Stock

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Continental Prestige Electronics

USA . 5,379 parts In-Stock

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Problanco Electronics

Mexico . 4,110 parts In-Stock

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Futuretech Components

Singapore . 3,980 parts In-Stock

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Argo Parts USA

USA . 3,478 parts In-Stock

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Assy Fe

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SupplyDigital Components

Austria . 1,931 parts In-Stock

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UHIMA Technologies

Türkiye . 780 parts In-Stock

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Bastille Electronics

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Overview

Discover the NTZS3151PT1G by Onsemi, a high-quality P-Channel Small Signal Field Effect Transistor perfect for switching applications. Manufactured with precision and expertise by Onsemi, this FET offers reliability and efficiency in a compact package. Ideal for enhancing circuit performance, this transistor provides customers with improved functionality and versatility. Whether you're looking to upgrade your electronics or expand your project capabilities, the NTZS3151PT1G delivers exceptional value and benefits that will take your designs to the next level. Unlock the potential of your creations with Onsemi's innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices and rugged applications.

Polarity or Channel Type: P-CHANNEL

The P-channel type transistor allows for current to flow when a negative voltage is applied, making it suitable for certain circuit configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and protects against reverse current flow, making the transistor more versatile in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly turn on and off, making it suitable for power management and control circuits.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient PCB assembly, saving space and enabling high-density circuit design.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, providing reliability and safety in operation.

Maximum Drain Current (ID): 0.86 A

Capable of handling a maximum drain current of 0.86A, this transistor is suitable for moderate power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable performance in demanding conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTZS3151PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.86 A

Maximum Drain Current (ID):

.86 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTZS3151PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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