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NTZS3151PT1H

Onsemi

NTZS3151PT1H by Onsemi

NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 151,765 parts In-Stock

1+ parts

-

100+ parts

$0.106

1k+ parts

$0.088

10k+ parts

$0.078

151,765

-

$0.106

$0.088

$0.078

DigiKey

USA . 151,765 parts In-Stock

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$0.130

151,765

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$0.130

Verical

USA . 151,765 parts In-Stock

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$0.098

151,765

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$0.098

Distributors (In-Stock)

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Digiode

USA . 1,216 parts In-Stock

1+ parts

$0.083

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1,216

$0.083

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Chip Stock

USA . 54,000 parts In-Stock

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54,000

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Vyrian

USA . 5,312 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 112 parts In-Stock

1+ parts

$0.073

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112

$0.073

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Corphita

USA . 164 parts In-Stock

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$0.078

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164

$0.078

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AZTECH Wire

Italy . 1,050 parts In-Stock

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$22.090

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1,050

$22.090

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Continental Prestige Electronics

USA . 151,765 parts In-Stock

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$0.104

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151,765

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$0.104

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QUARKTWIN TECHNOLOGY LTD

USA . 10,635 parts In-Stock

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TANS Electronics

Latvia . 7,101 parts In-Stock

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Problanco Electronics

Mexico . 7,076 parts In-Stock

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Kulean Microsystems

USA . 4,705 parts In-Stock

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SupplyDigital Components

Austria . 2,488 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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865

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Overview

Unlock the potential of your electronic devices with the NTZS3151PT1H by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Field Effect Transistors that set new standards in performance and reliability. Ideal for a variety of applications, from consumer electronics to industrial automation, this P-CHANNEL FET offers customers unmatched value and benefits. Experience the advantages of Onsemi's advanced technology and maximize the efficiency of your designs with the NTZS3151PT1H.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low input capacitance and high input impedance, making them ideal for low-power applications.

Configuration: SINGLE

Single configuration allows for easy integration and simplifies circuit design.

Surface Mount: YES

Surface mount design saves space on the PCB and enables automated assembly processes.

Maximum Drain Current (Abs): 0.86 A

High maximum drain current rating allows for handling of larger currents, increasing versatility in application use.

Maximum Power Dissipation (Abs): 0.21 W

Low power dissipation helps in reducing heat generation and improves overall efficiency of the system.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good noise immunity and high input impedance, enhancing signal quality and reliability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in harsh environments without compromising performance.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time reduces the risk of damage to the component during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables reliable solder joints and ensures proper connection during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTZS3151PT1H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.86 A

Maximum Drain Current (ID):

.86 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTZS3151PT1H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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